| AVS 66th International Symposium & Exhibition | |
| Spectroscopic Ellipsometry Focus Topic | Wednesday Sessions |
| Session EL+EM-WeA |
| Session: | Spectroscopic Ellipsometry: Novel Applications and Theoretical Approaches |
| Presenter: | Gai Chin, ULVAC Inc., Japan |
| Correspondent: | Click to Email |
This presentation describes a novel method for the spectroscopic measurement of the state of polarization of light. A pair of thick birefringent retarders is incorporated into the spectroscopic polarimeter, so the generated channeled spectrum is composed of three quasi-cosinusoidal components carrying the information about the state of polarization of the light that is being measured. Fourier inversion of the channeled spectrum provides the significant parameters for determination of the spectrally resolved Stokes parameters of light. No mechanical movable components for polarization control or active devices for polarization modulation are used, and all the Stokes parameters can be determined at once from only the single spectrum.
The channeled spectroscopic ellipsometry is a snapshot method for the spectrally-resolved polarization analysis. A pair of high-order retarders are utilized to generate a channeled spectrum carrying information about the wavelength-dependent multiple parameters of polarization of light. This method has a feature that it requires no mechanical or active components for polarization-control, such as a rotating compensator and electro-optic modulator.
This novel spectroscopic ellipsometry can measure the thickness and optical constants of thin films at a dramatically fast speed. Its data acquisition time is as short as 10ms. It does not require any active components for polarization-control, such as a rotating compensator or an electro-optical modulator.
It created great opportunities for new applications of the spectroscopic ellipsometry in which the compactness, the simplicity and the rapid response are extremely important. It can be integrated into the deposition tool and successfully measured thin films in-situ and ex-situ. Obviously, those from PVD, CVD and ALD are some promising applications for this novel spectroscopic ellipsometry.
This presentation describes our new progress on some key technologies for enhancing the performance of this channeled spectroscopic ellipsometry by system configuration, data analysis and other creative efforts on developing a series of new high-speed spectroscopic ellipsometers. Some novel applications will be also introduced, such as the PVD, CVD, ALD, EUV, OLED, MEMS and some excellent measurement data of thin films from the semiconductor, flat panel display and other industries.