AVS 66th International Symposium & Exhibition | |
Spectroscopic Ellipsometry Focus Topic | Wednesday Sessions |
Session EL+AS+EM+TF-WeM |
Session: | Optical Characterization of Thin Films and Nanostructures |
Presenter: | Susumu Fukatsu, University of Tokyo, Japan |
Authors: | T. Sakamoto, University of Tokyo, Japan Y. Yasutake, University of Tokyo, Japan J. Kanasaki, Osaka City University, Japan S. Fukatsu, University of Tokyo, Japan |
Correspondent: | Click to Email |
Ge offers a unique advantage of gaining a deeper insight into the intervalley coupling of hot electrons [1], which is arguably of importance in the context of controlling the optoelectronic and photonic functionalities [2]. In view of the complicated valley degeneracy in the near-band-edge region, such intervalley coupling of electrons plays a pivotal part even when strain-engineering pseudomorphic Ge-based quantum structures.
The capability of direct-gap emission at room temperature is of considerable practical significance of Ge, for which an added advantage is that emission wavelengths fortuitously fall within the telecom bands. Moreover, Ge is particularly interesting from the device physics point of view as it outperforms many semiconductor allies in the sense that thermal dequenching occurs near room-temperature: the emitted light intensity increases with increasing temperature, which is convenient but nevertheless logic-defying.
Such a rather counterintuitive “thermal roll-up”, as opposed to thermal roll-off which is usually more relevant, has been interpreted in terms of two-level electron kinetics assuming local thermal equilibrium; long-lived electrons populating the indirect conduction-band bottom, i.e., L-valleys, are excited up into the direct-gap Γ-valley by absorbing phonons, which seems to fit a fairly standard phenomenological picture reasonably well. To the contrary, this model system fails in the case of Ge layers, the quality of crystallinity of which is compromised because of a low growth temperature. In fact, they only show steady thermal roll-off, viz. quenching, without a trace of the anticipated dequenching.
These apparently conflicting observations can be reconciled only by considering another otherwise invisible hidden conduction-band valley that comes in between the L andΓ valleys to decouple them. A three-level scheme is naturally invoked thereby. Indeed, it explains not only the missing dequenching but the lost local thermal equilibrium in low-quality layers. As a proof of such a conjecture, an attempt was made to directly capture the hidden valleys by means of time- and angle-resolved two-photon photoemission [3]. Preliminary results indicate the relevance of X(Δ)-valleys, which are slightly above the Γ-valley, in the dequenching of room-temperature emission as a result of ultrafast coupling of L-X(Δ)-Γ valleys by phonons taking up large crystal momenta. These are consistent with theory and luminescence study.
1. T. Sakamoto et al., Appl. Phys. Lett. 105, 042101 (2014).
2. Y. Yasutake and S. Fukatsu, Spoken at 2018 APS March Meeting (Los Angeles, 2018), P07.00012.
3. J . Kanasaki et al., Phys. Rev. B 96, 115301 (2017).