Invited Paper AP+EL+MS+PS+SS+TF-TuA7
Surface, Interface, or Film: A Discussion of the Metrology of ALD Materials in Semiconductor Applications

Tuesday, October 22, 2019, 4:20 pm, Room B130

Atomic layer deposition, etching, and interface engineering are enabling technologies for semiconductor manufacturing. These processes have led to an explosion in the use of laboratory techniques such as transmission electron microscopy and the need to bring such instruments closer to or into the fab itself. However, there remains a need for in-line, non-destructive, non-contact metrology capable of quickly characterizing and monitoring these extremely thin films on test structures, on product, or in device as these data are the only meaningful method for monitoring of ultimate device performance. Indeed, in cases such as the use of selective deposition or etching, no test vehicle other than the ultimate product may be relevant. A variety of measurement techniques with a focus on x-ray and optical probes as applied to this class of problems will be reviewed. Examples will be provided on relevant logic such as the Gat-All-Around FET and memory devices such as 3D NAND.