AVS 65th International Symposium & Exhibition | |
Plasma Science and Technology Division | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
8:20am | PS+AS+EM+SS-MoM1 Atomic-scale Numerical Simulation of a Nanometer-Scale Hole Etching of SiO2 with a Carbon Mask Charisse Marie Cagomoc, M. Isobe, S. Hamaguchi, Osaka University, Japan |
8:40am | PS+AS+EM+SS-MoM2 SF6/O2 Plasma Nanotexturing of Silicon: Decoupling How Ion Flux and Ion Energy Matter Guillaume Fischer, Institut Photovoltaïque d’Ile-de-France (IPVF), France, E. DRAHI, S.A. FILONOVICH, Total SA Renewables, France, E.V. Johnson, LPICM, CNRS, Ecole polytechnique, Université Paris-Saclay, France |
9:00am | PS+AS+EM+SS-MoM3 Corrosion Resistance to F and Cl plasma of Yttrium Oxyfluoride (YOF) formed by Sintering Akinobu Teramoto, Y. Shiba, T. Goto, Tohoku University, Japan, Y. Kishi, Nippon Yttrium Co., Ltd, Japan, S. Sugawa, Tohoku University, Japan |
9:20am | PS+AS+EM+SS-MoM4 Decay of Hydrogen in NF3/Ar and O2/Ar Cleaning Process by Optical Emission Spectroscopy Hanyang Li, Y. Zhou, V.M. Donnelly, University of Houston, J. Chiu, X. Chen, MKS |
9:40am | PS+AS+EM+SS-MoM5 Invited Paper Plasma-surface Interactions in the Strongly Coupled Regime Thomas Morgan, DIFFER, Netherlands |
10:40am | PS+AS+EM+SS-MoM8 Tailoring the Surface Properties of Porous Zeolite Constructs using Plasma Processing Angela Hanna, E.R. Fisher, Colorado State University |
11:00am | PS+AS+EM+SS-MoM9 Generation Kinetics of Plasma-induced Electronic Defects in Semiconductor Materials Shota Nunomura, I. Sakata, K. Matsubara, National Institute of Advanced Industrial Science and Technology (AIST), Japan |
11:20am | PS+AS+EM+SS-MoM10 Evolution of Photoresist Layer Structure and Surface Morphology under Fluorocarbon-Based Plasma Exposure Adam Pranda, S.A. Gutierrez Razo, J.T. Fourkas, G.S. Oehrlein, University of Maryland, College Park |
11:40am | PS+AS+EM+SS-MoM11 Fundamental Studies of Plasma Species with Organic Materials of Varying Hydrogen and Oxygen Composition by Computational and Experimental Approaches Yusuke Fukunaga, Nagoya University, Japan, P.L.G. Ventzek, B. Lane, Tokyo Electron America, Inc., A. Ranjan, TEL Technology Center America, LLC, M. Sekine, T. Tsutsumi, H. Kondo, K. Ishikawa, Plasma Nanotechnology Research Center, Japan, R. Upadhyay, Esgee Technologies, L. L. Raja, The University of Texas at Austin, G. Hartmann, McKetta Department of Chemical Engineering, The University of Texas at Austin, G. S. Hwang, The University of Texas at Austin, M. Hori, Institute of innovation for future society, Japan |