AVS 65th International Symposium & Exhibition
    Plasma Science and Technology Division Monday Sessions
       Session PS+AS+EM+SS-MoM

Paper PS+AS+EM+SS-MoM3
Corrosion Resistance to F and Cl plasma of Yttrium Oxyfluoride (YOF) formed by Sintering

Monday, October 22, 2018, 9:00 am, Room 104A

Session: Plasma-Surface Interactions
Presenter: Akinobu Teramoto, Tohoku University, Japan
Authors: A. Teramoto, Tohoku University, Japan
Y. Shiba, Tohoku University, Japan
T. Goto, Tohoku University, Japan
Y. Kishi, Nippon Yttrium Co., Ltd, Japan
S. Sugawa, Tohoku University, Japan
Correspondent: Click to Email

Corrosion resistance to the reactive species in some kinds of plasma is very important to construct the reliable semiconductor process equipment. Especially the Fluorine and/or Chlorine plasma have the strong corrosiveness, and then it is strongly required that the inner wall material of the plasma chamber and the components in the plasma chamber have corrosion resistance to them. We have reported the Yttrium oxyfluoride (YOF, Y:O:F=1:1:1) film has the higher resistance to some plasma conditions (N2/Ar, H2/Ar, NH3/Ar, NF3/Ar, O2/Ar) than the Y2O3 and YF3 films 1, 2. In this presentation, we report the corrosion resistance to NF3/Ar, Cl2/Ar and O2/Ar plasma of YOF formed by sintering. The Y, O and F composition was controlled by mixing ratio of the YOF, YF3, and Y5O4F7 before the sintering, as the results, the O concentration was varied from 3 to 12 %. All YOF formed by the sintering are more stable to NF3/Ar and O2/Ar plasma than the YOF film and both Y2O3 film and formed by sintering. Cl2/Ar plasma shows the stronger corrosion effect to the Y2O3 and YOF’s, however the corrosion resistance to Cl plasma of YOF’s is higher than the Y2O3.

These results indicate that the YOF is much stable against the corrosion by the plasma, and YOF formed by sintering is the promising material to construct the components in the plasma chamber.

Acknowledgement

The plasma irradiation and inspection were carried out in Fluctuation-Free-Facility in Tohoku University.

References

1. Y. Shiba, A. Teramoto, T. Goto, Y. Kishi, Y. Shirai and S. Sugawa, J. Vac. Sci. Technol. A, 35 (2), 021405 (2017).

2. Y. Shiba, A. Teramoto, T. Goto and Y. Kishi, p. 111, AVS 64th International Symp., Tampa, 2017.