AVS 65th International Symposium & Exhibition | |
Electronic Materials and Photonics Division | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
8:00am | EM+AN+MI+SS-WeM1 Invited Paper Few Monolayer Atomic Layer Deposition (ALD) to Engineer New Surfaces and Interfaces Parag Banerjee, Washington University in St. Louis |
8:40am | EM+AN+MI+SS-WeM3 Lattice-alignment mechanism of SiGe on Sapphire HyunJung Kim, National Institute of Aerospace, S. Choi, NASA Langley Research Center |
9:00am | EM+AN+MI+SS-WeM4 An Effort to Resolve Band Offset Anomalies in ZnO/GaN Heterostructures Monu Mishra, A. Gundimeda, V. Vandana, G. Gupta, CSIR-National Physical Laboratory, India |
9:20am | EM+AN+MI+SS-WeM5 Stress Relaxation in the Si-SiO2 System and its Influence on the Interface Properties Daniel Kropman, T. Laas, Tallinn University, Estonia, A. Medvids, Riga Technical University, Latvia |
9:40am | EM+AN+MI+SS-WeM6 Unique Sensitivity to Deep Trap States Demonstrated by CREM of Broad Bandgap Dielectric Layers Hagai Cohen, Weizmann Institute of Science, Israel, K.X. Steirer, Colorado School of Mines |
11:00am | EM+AN+MI+SS-WeM10 Fabrication of Multilayered Optically Active Nanocrystal Solids by Surface Passivation using Metal Oxides: ALD vs CVD Riya Bose, A.D. Dangerfield, University of Texas at Dallas, S.M. Rupich, University of Texas, Y.J. Chabal, A.V. Malko, University of Texas at Dallas |
11:20am | EM+AN+MI+SS-WeM11 The Role of Surface Oxides for the Optoelectronic Performance of III-V Semiconductor Nanowires J. Colvin, A. Troian, O. Persson, A. Mikkelsen, Rainer Timm, Lund University, Sweden |
11:40am | EM+AN+MI+SS-WeM12 Photonic Annealing of 2D Transition Metal Dichalcogenides for Tailored Optical Properties Rachel Rai, K. Gliebe, University of Dayton; Air Force Research Laboratory, N.R. Glavin, R. Kim, A. Jawaid, R. Wheeler, L. Bissell, Air Force Research Laboratory, C. Muratore, University of Dayton |
12:00pm | EM+AN+MI+SS-WeM13 Polarity Control of GaN Nanowires on Diamond: Experiment and Theory Karin Larsson, Uppsala University, Sweden, M. Hetzl, M. Kraut, T. Hoffmann, M. Stutzmann, Technical University Munich, Germany |