AVS 65th International Symposium & Exhibition
    Electronic Materials and Photonics Division Wednesday Sessions
       Session EM+AN+MI+SS-WeM

Paper EM+AN+MI+SS-WeM12
Photonic Annealing of 2D Transition Metal Dichalcogenides for Tailored Optical Properties

Wednesday, October 24, 2018, 11:40 am, Room 101A

Session: Surface and Interface Challenges in Electronics and Photonics
Presenter: Rachel Rai, University of Dayton; Air Force Research Laboratory
Authors: R.H. Rai, University of Dayton; Air Force Research Laboratory
K. Gliebe, University of Dayton; Air Force Research Laboratory
N.R. Glavin, Air Force Research Laboratory
R. Kim, Air Force Research Laboratory
A. Jawaid, Air Force Research Laboratory
R. Wheeler, Air Force Research Laboratory
L. Bissell, Air Force Research Laboratory
C. Muratore, University of Dayton
Correspondent: Click to Email

Thin layers of transition metal dichalcogenides (TMD) have attracted significant interest in the field of optoelectronics due to their unique light absorption and emission properties in the visible frequency range. Development of bright, flexible, large area emission sources based on 2D materials using photonic annealing represents an exciting opportunity for future quantum systems. Here we introduce new correlations relating the optical properties of WSe2, a well-known single photon emitter, to post-processing annealing techniques to include lasers, broadband radiation, and nanoscale electron beams. Modulation of the total energy flux during growth of amorphous TMD material to develop purely amorphous materials or materials with nanoscale nuclei was employed by the authors to examine effects of pre-existing nuclei on crystallization kinetics (i.e., activation energy) and the resulting optical properties. We correlate the wavelength and intensity of photoluminescence from WSe2 deposited on plasma treated and as-received flexible substrates and present techniques to control film continuity and the areal density of free edges from islands on discontinuous films for tuning the intensity of optical emission. A significant increase in photoluminescence intensity is accompanied by a change in domain boundary density, correlating well to theory. Furthermore, examination of quantum confinement effects by producing nanoscale crystalline areas (between 5-50 nm) with precisely controlled volumes via electron beam radiation provides insight on light emission mechanisms.