| AVS 65th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Wednesday Sessions |
| Session EM+AN+MI+SS-WeM |
| Session: | Surface and Interface Challenges in Electronics and Photonics |
| Presenter: | Hagai Cohen, Weizmann Institute of Science, Israel |
| Authors: | H. Cohen, Weizmann Institute of Science, Israel K.X. Steirer, Colorado School of Mines |
| Correspondent: | Click to Email |
Chemically resolved electrical measurements (CREM) present an efficient and sensitive means for studies of structural-electrical inter-relationships in heterostructures. Operated in-situ to x-ray photoelectron spectroscopy (XPS), the technique is yet far from being fully exploited. Recent progress in our CREM instrumentation has, however, opened new opportunities to which this report is dedicated. Using broad-bandgap dielectric layers, such as SiO2, SiON and ZnOS, we tested the CREM resolving power and sensitivity to charge trap states. These experiments yielded band diagrams with fine details on charge traps, which typically require the application of advanced optical techniques combined with the electrical characterization tools.
In addition, an intriguing process of doubly triggered conductance in ZnOS was observed. The ZnOS layers exhibited very poor conductance under either electrical or optical input signals, whereas simultaneous application of the two yielded extremely high sample currents. Based on the in-situ derived band diagram, a comprehensive explanation of the effect is provided. Moreover, we show how the CREM analytical tool can also provide a potential activator of future related devices.