| AVS 65th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:40pm | EM+2D+SS-WeA2 2300 V Reverse Breakdown Voltage Ga2O3 Schottky Rectifiers Jiancheng Yang, F.R. Ren, University of Florida, M.J. Tadjer, U.S. Naval Research Laboratory, S.J. Pearton, University of Florida, A. Kuramata, Tamura Corporation and Novel Crystal Technology, Inc., Japan |
| 3:00pm | EM+2D+SS-WeA3 Characterization of β-(Al,Ga,In)2O3 Epitaxial Films for UV Photodetector Applications Luke Lyle, L.M. Porter, R. Davis, Carnegie Mellon University, S. Okur, G.S. Tompa, Structured Materials Industries, Inc., M. Chandrashekhar, V. Chava, J. Letton, University of South Carolina |
| 3:20pm | EM+2D+SS-WeA4 High Three-terminal Breakdown Voltage Quasi-two-dimensional β -Ga2O3 Field-effect Transistors with a Dual Field Plate Structure Jinho Bae, Korea University, Republic of Korea, H.W. Kim, I.H. Kang, Korea Electrotechnology Research Institute (KERI), Republic of Korea, G.S. Yang, S.Y. Oh, J.H. Kim, Korea University, Republic of Korea |
| 4:20pm | EM+2D+SS-WeA7 Invited Paper GaN Vertical Device Technology and its Future S.C. Chowdhury, Dong Ji, UC Davis |
| 5:00pm | EM+2D+SS-WeA9 Effects of Proton Irradiation Energy on SiNx/AlGaN/GaN Metal-insulator-semiconductor High Electron Mobility Transistors Chaker Fares, F.R. Ren, University of Florida, J.H. Kim, Korea University, Republic of Korea, S.J. Pearton, University of Florida, C.F. Lo, J.W. Johnson, IQE, G.S. Yang, Korea University, Republic of Korea |
| 5:20pm | EM+2D+SS-WeA10 Cesium-Free III-Nitride Photocathodes Based on Control of Polarization Charge Douglas Bell, Jet Propulsion Laboratory, California Institute of Technology, E. Rocco, F. Shahedipour-Sandvik, SUNY Polytechnic Institute, S. Nikzad, Jet Propulsion Laboratory, California Institute of Technology |
| 5:40pm | EM+2D+SS-WeA11 Current Enhancement for Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors by Regrowth Contact Design Erica Douglas, B. Klein, S. Reza, A.A. Allerman, R.J. Kaplar, A.M. Armstrong, A.G. Baca, Sandia National Laboratories |
| 6:00pm | EM+2D+SS-WeA12 Understanding Homoepitaxial GaN Growth Jennifer Hite, T.J. Anderson, M.A. Mastro, L.E. Luna, J.C. Gallagher, J.A. Freitas, U.S. Naval Research Laboratory, C.R. Eddy, Jr., U. S. Naval Research Laboratory |