| AVS 65th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Wednesday Sessions |
| Session EM+2D+SS-WeA |
| Session: | Wide and Ultra-Wide Bandgap Materials for Electronic Devices: Growth, Modeling and Properties |
| Presenter: | Luke Lyle, Carnegie Mellon University |
| Authors: | L.A.M. Lyle, Carnegie Mellon University L.M. Porter, Carnegie Mellon University R. Davis, Carnegie Mellon University S. Okur, Structured Materials Industries, Inc. G.S. Tompa, Structured Materials Industries, Inc. M. Chandrashekhar, University of South Carolina V. Chava, University of South Carolina J. Letton, University of South Carolina |
| Correspondent: | Click to Email |
β-Ga2O3 has garnered increased attention over the last few years due to its ultra-wide bandgap of ~5.0 eV and the ability to grow Ga2O3 single crystals from the melt. In addition to its desirability for high power electronics, Ga2O3 is well suited for solar-blind UV photodetectors. These detectors are coveted by numerous industries and the military for applications ranging from flame- and missile-plume detection to ozone hole monitoring. In this study we have grown (Al,Ga,In)2O3-based alloy epitaxial films on sapphire via metalorganic chemical vapor deposition (MOCVD) to investigate their potential application for wavelength-tunable UV photodetectors. The films were characterized structurally, optically, and chemically using x-ray diffraction (XRD), optical transmittance, and energy dispersive x-ray spectroscopy (EDX). Based on XRD and EDX results, β-(AlxGa1-x)2O3, β-(InxGa1-x)2O3, and β-Ga2O3 epitaxial films with compositions through x = 0.29 (for Al) and x = 0.13 (for In) were grown. The optical bandgap was found to correspondingly vary between 5.5±0.1 and 4.3±0.3 eV, as a function of composition. MSM- and Schottky-based solar-blind UV photodetectors were also fabricated on selected films. The devices showed responsivities up to 1E5 A/W and quantum efficiencies up to 6E5 at 220 nm from a deuterium lamp. The wavelength tunability of the photodetectors is currently being investigated and will be discussed in this presentation.