AVS 65th International Symposium & Exhibition | |
2D Materials Focus Topic | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
2:20pm | 2D+EM+MI+MN+NS-TuA1 Spin Relaxation and Proximity Effect in WS2/Graphene/Fluorographene Non-local Spin Valves Adam Friedman, Laboratory for Physical Sciences, K.M. McCreary, J.T. Robinson, O.M.J. van 't Erve, B.T. Jonker, US Naval Research Laboratory |
2:40pm | 2D+EM+MI+MN+NS-TuA2 Two-dimensional Field-effect Light Emitting Transistors Junyoung Kwon, H. Ryu, Yonsei University, Republic of Korea, J.Y. Lee, C.H. Lee, Korea University, Republic of Korea, G.H. Lee, Yonsei University, Republic of Korea |
3:00pm | 2D+EM+MI+MN+NS-TuA3 Invited Paper Quantum Devices with 2D Materials H. Overweg, M. Eich, R. Pisoni, T. Ihn, P. Rickhaus, ETH Zurich, Switzerland, Klaus Ensslin, ETH Zürich, Switzerland |
4:20pm | 2D+EM+MI+MN+NS-TuA7 GaN Microdisk Light-emitting Diode Display Fabricated on Graphene Youngbin Tchoe, K. Chung, K. Lee, M.S. Song, J.B. Park, H. Kim, J.Y. Park, G.-C. Yi, Seoul National University, Republic of Korea |
4:40pm | 2D+EM+MI+MN+NS-TuA8 Room Temperature Magnetron Sputtering and Laser Annealing of Ultrathin MoS2 for Transistor Device Fabrication on Flexible Polymer Substrates Benjamin Sirota, University of North Texas, N.R. Glavin, Air Force Research Laboratory, C. Arnold, A.A. Voevodin, University of North Texas |
5:00pm | 2D+EM+MI+MN+NS-TuA9 Invited Paper Black Phosphorus: Fundamental Properties and Emerging Applications Han Wang, University of Southern California |
5:40pm | 2D+EM+MI+MN+NS-TuA11 Patterned Growth of Hybrid Bulk-2D Tungsten Diselenide for Transistor Applications Quinten Yurek, I. Liao, D. Barroso, A.E. Nguyen, N. Duong, G. Stecklein, L. Bartels, University of California, Riverside |
6:00pm | 2D+EM+MI+MN+NS-TuA12 Enhanced Ionic Sensitivity in Solution-Gated Graphene-Hexagonal Boron Nitride Heterostructure Field-Effect Transistors A.D. Radadia, Nowzesh Hasan, B. Hou, A.L. Moore, Louisiana Tech University |