AVS 65th International Symposium & Exhibition
    2D Materials Focus Topic Tuesday Sessions

Session 2D+EM+MI+MN+NS-TuA
2D Device Physics and Applications

Tuesday, October 23, 2018, 2:20 pm, Room 201B
Moderator: Roland Kawakami, The Ohio State University


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

2:20pm 2D+EM+MI+MN+NS-TuA1
Spin Relaxation and Proximity Effect in WS2/Graphene/Fluorographene Non-local Spin Valves
Adam Friedman, Laboratory for Physical Sciences, K.M. McCreary, J.T. Robinson, O.M.J. van 't Erve, B.T. Jonker, US Naval Research Laboratory
2:40pm 2D+EM+MI+MN+NS-TuA2
Two-dimensional Field-effect Light Emitting Transistors
Junyoung Kwon, H. Ryu, Yonsei University, Republic of Korea, J.Y. Lee, C.H. Lee, Korea University, Republic of Korea, G.H. Lee, Yonsei University, Republic of Korea
3:00pm 2D+EM+MI+MN+NS-TuA3 Invited Paper
Quantum Devices with 2D Materials
H. Overweg, M. Eich, R. Pisoni, T. Ihn, P. Rickhaus, ETH Zurich, Switzerland, Klaus Ensslin, ETH Zürich, Switzerland
4:20pm 2D+EM+MI+MN+NS-TuA7
GaN Microdisk Light-emitting Diode Display Fabricated on Graphene
Youngbin Tchoe, K. Chung, K. Lee, M.S. Song, J.B. Park, H. Kim, J.Y. Park, G.-C. Yi, Seoul National University, Republic of Korea
4:40pm 2D+EM+MI+MN+NS-TuA8
Room Temperature Magnetron Sputtering and Laser Annealing of Ultrathin MoS2 for Transistor Device Fabrication on Flexible Polymer Substrates
Benjamin Sirota, University of North Texas, N.R. Glavin, Air Force Research Laboratory, C. Arnold, A.A. Voevodin, University of North Texas
5:00pm 2D+EM+MI+MN+NS-TuA9 Invited Paper
Black Phosphorus: Fundamental Properties and Emerging Applications
Han Wang, University of Southern California
5:40pm 2D+EM+MI+MN+NS-TuA11
Patterned Growth of Hybrid Bulk-2D Tungsten Diselenide for Transistor Applications
Quinten Yurek, I. Liao, D. Barroso, A.E. Nguyen, N. Duong, G. Stecklein, L. Bartels, University of California, Riverside
6:00pm 2D+EM+MI+MN+NS-TuA12
Enhanced Ionic Sensitivity in Solution-Gated Graphene-Hexagonal Boron Nitride Heterostructure Field-Effect Transistors
A.D. Radadia, Nowzesh Hasan, B. Hou, A.L. Moore, Louisiana Tech University