AVS 65th International Symposium & Exhibition
    2D Materials Focus Topic Tuesday Sessions
       Session 2D+EM+MI+MN+NS-TuA

Paper 2D+EM+MI+MN+NS-TuA8
Room Temperature Magnetron Sputtering and Laser Annealing of Ultrathin MoS2 for Transistor Device Fabrication on Flexible Polymer Substrates

Tuesday, October 23, 2018, 4:40 pm, Room 201B

Session: 2D Device Physics and Applications
Presenter: Benjamin Sirota, University of North Texas
Authors: B. Sirota, University of North Texas
N.R. Glavin, Air Force Research Laboratory
C. Arnold, University of North Texas
A.A. Voevodin, University of North Texas
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Pulsed magnetron sputtering and subsequent laser annealing provide technologically attractive scalable route for producing two-dimensional (2D) semiconducting grade MoS2 materials directly on the surface of flexible polymer substrates. In this study the room temperature magnetron sputtering was used to deposit 10 nm thick, amorphous MoS2 films on flexible PDMS as well as rigid SiO2/Si substrates. This was followed by 248 nm pulsed laser annealing to produce polycrystalline 2H-MoS2 over large areas. Raman and XPS analysis confirmed that pulsed laser annealing with about 1 mJ/cm2 energy density had induced film crystallization from amorphous to hexagonal, while preserving MoS2 chemical composition, and avoiding formation of oxide phases or damage to the temperature-sensitive polymer surface. Electrical measurements confirmed an order of magnitude improvement in electrical conductivity of the laser annealed films as compared to amorphous MoS2. Top-gated field effect transistor (FET) devices with laser annealed sputter grown MoS2 were directly fabricated on PDMS surfaces. Oxygen substitution of sulfur in sputter deposited MoS2 and polycrystallinity of the laser annealed 2H-MoS2 films resulted in low mobility values when compared to mechanically exfoliated and chemical vapor deposition grown single-crystal 2D MoS2. However, the described approach is intrinsically scalable and provides a direct growth route for the fabrication of 2D transition metal dichalcogenide semiconducting devices on the surface of flexile and stretchable polymers.