AVS 65th International Symposium & Exhibition
    2D Materials Focus Topic Tuesday Sessions
       Session 2D+EM+MI+MN+NS-TuA

Paper 2D+EM+MI+MN+NS-TuA12
Enhanced Ionic Sensitivity in Solution-Gated Graphene-Hexagonal Boron Nitride Heterostructure Field-Effect Transistors

Tuesday, October 23, 2018, 6:00 pm, Room 201B

Session: 2D Device Physics and Applications
Presenter: Nowzesh Hasan, Louisiana Tech University
Authors: A.D. Radadia, Louisiana Tech University
N. Hasan, Louisiana Tech University
B. Hou, Louisiana Tech University
A.L. Moore, Louisiana Tech University
Correspondent: Click to Email
The charge transport in solution-gated graphene devices is affected by the impurities and disorder of the underlying dielectric interface and its interaction with the solution. This paper reports advancement in field-effect ion sensing by fabricating a dielectric isomorph, hexagonal boron nitride between graphene and silicon dioxide of a solution-gated graphene field effect transistor. Ionic sensitivity of Dirac voltage as high as -198 mV/decade for K+ and -110 mV/decade for Ca2+ were recorded. Increased transconductance due to increased charge carrier mobility was accompanied with larger ionic sensitivity of the transconductance due to larger ionic sensitivity of the charge carrier mobility. These findings define a standard to construct future graphene devices for biosensing and bioelectronics applications.