| AVS 65th International Symposium & Exhibition | |
| Plasma Science and Technology Division | Tuesday Sessions |
| Session PS-TuP |
| Session: | Plasma Science and Technology Division Poster Session |
| Presenter: | JiSoo Oh, Sungkyunkwan University, Republic of Korea |
| Authors: | J.S. Oh, Sungkyunkwan University, Republic of Korea G.Y. Yeom, Sungkyunkwan University, Republic of Korea |
| Correspondent: | Click to Email |
Of the various alternative lithography technologies, direct self-assembly (DSA) patterning technology using block copolymer (BCP) has received great attention due to excellent pattern resolution, process simplicity, low cost, and long-range ordering (good scalability).
Polystyrene-block-polydimethylsiloxane (PS-b-PDMS) with high Flory-Huggins interaction parameter (χ) have been extensively studied because they provide ultra-fine patterning and improved pattern quality. However, due to the preferential segregating property of PDMS in air and PS interface, it is disadvantageous to vertical orientation and it is difficult to fabricate BCP patterns with high aspect ratio (HAR)
Here, we will introduce the process of effectively pattern transfer by inserting an amorphous carbon layer (ACL) between the PS-b-PDMS BCP patterns and the underlying silicon substrate. In this study, we have overcome limitations of PS-b-PDMS BCP patterns with low aspect ratios by developing an etch selectivity close to infinity using plasma etch process. The PDMS patterns of various shapes could be fabricated into lamellar, rod, hole pattern with HAR by pattern transfer to ACL due to high etch selectivity plasma process. Also, line edge roughness (LER) and line width roughness (LWR) was improved due to the plasma trimming effect.