AVS 65th International Symposium & Exhibition
    Plasma Science and Technology Division Tuesday Sessions
       Session PS-TuP

Paper PS-TuP25
Development of an In-situ Plasma Enhanced Atomic Layer Etching System for III-group Nitride Device Process

Tuesday, October 23, 2018, 6:30 pm, Room Hall B

Session: Plasma Science and Technology Division Poster Session
Presenter: C.P. Lin, National Applied Research Laboratories, Taiwan, Republic of Korea
Authors: C.P. Lin, National Applied Research Laboratories, Taiwan, Republic of Korea
Y.H. Lin, National Applied Research Laboratories, Taiwan, Republic of Korea
C.C. Chen, National Applied Research Laboratories, Taiwan, Republic of Korea
M.K. Wang, National Applied Research Laboratories, Taiwan, Republic of Korea
C.N. Hsiao, National applied research Laboratories,Taiwan, Republic of Korea
F.Z. Chen, National Applied Research Laboratories, Taiwan, Republic of Korea
Correspondent: Click to Email
An in-situ plasma enhanced atomic layer etching system has been design and fabricated. NO2, BCl3 and Ar plasma were used as the precursor for AlGaN epitaxy layer at various temperature. The optical detector was used to in-situ monitor the plasma spectrum during the step by step etching process. It is found that the layer by layer etching feature shows the process is a controlled self-limited reaction. In addition, the saturation curve of etching rate and precursor pulsed time has been established. Furthermore, This system could be used for the III-group nitride semiconductor device process.