| AVS 65th International Symposium & Exhibition | |
| Plasma Science and Technology Division | Tuesday Sessions |
| Session PS-TuP |
| Session: | Plasma Science and Technology Division Poster Session |
| Presenter: | Yingliang Zhou, University of Houston |
| Authors: | Y. Zhou, University of Houston H. Li, University of Houston V.M. Donnelly, University of Houston J. Chiu, MKS Instruments, Inc., Pressure and Vacuum Measurement Group X. Chen, MKS Instruments, Inc., Pressure and Vacuum Measurement Group |
| Correspondent: | Click to Email |
Remote plasmas are drawing increasing attention for applications including chamber cleaning, chemical vapor deposition (CVD), surface modification and isotropic etching. The process is purely chemical in nature, with no surface damage from ion bombardment. The dissociation and recombination rates in the plasma source determine the reactive species fluxes delivered to the downstream chamber. The presentation will focus on measurements of percent dissociation of source gases commonly used in chamber cleaning and flowable CVD processes. Mixtures of N2/H2, O2, and NF3 feed gases with Ar were delivered to the plasma at 400 sccm total flow rate and pressures of 0.4-4.0 Torr. The purely inductive, low frequency (400 kHz), toroidal plasma source (MKS Instruments) operates at a power density of 5 – 50 W/cm3. Radical densities and feed gas dissociation percentages in the plasma were measured by UV-visible optical emission spectroscopy (OES), combined with Ar actinometry. Effluents from the plasma source flowed into a downstream chamber that was equipped with a Deuterium lamp and a VUV spectrometer, for absorption spectroscopy measurements. The dissociation of O2, NF3 and N2/H2 gases in the plasma source will be compared to those measured downstream as a function of added Ar, total flow rate, discharge current, relative electron density and other plasma parameters.