| AVS 65th International Symposium & Exhibition | |
| Plasma Science and Technology Division | Tuesday Sessions |
| Session PS-TuP |
| Session: | Plasma Science and Technology Division Poster Session |
| Presenter: | Jan Uhlig, University of Illinois at Urbana-Champaign |
| Authors: | J. Uhlig, University of Illinois at Urbana-Champaign E. Barlaz, University of Illinois at Urbana-Champaign D.N. Ruzic, University of Illinois at Urbana-Champaign |
| Correspondent: | Click to Email |
We report on the correlation between hydrogen radical concentrations and the densities of amorphous silicon produced by DCMS in Ar. Previously, the addition of molecular hydrogen during growth at pressures sufficient to produce viable inclusion rates frequently led to blister formation and potential delamination in the final film. An alternative approach demonstrated here is to improve the concentration of hydrogen radicals relative to molecular hydrogen th rough the use of a secondary plasma from an RF coil in the deposition chamber. At 300 W RF power and 1 mTorr of Ar, the addition of a fraction of a mTorr of hydrogen gas leads to a 20% reduction on film density. The relationship between hydrogen radical concentration production and secondary plasma power will be characterized by radical probe measurements.