Paper PS-FrM9
Numerical Modeling of Capacitively Coupled Plasma Process Chamber using CCPFoam

Friday, October 26, 2018, 11:00 am, Room 104A

Plasma etching and deposition of thin films on Silicon wafers are an integral part of the microelectronics manufacturing process. To facilitate design and development of such systems, plasma modeling is of immense importance. In this work, we intend to perform computer simulations of a typical radio-frequency plasma processing system used for plasma enhanced chemical vapor deposition. Details of the rounded wafer edge and process kit geometry have been well resolved using our high performance computational framework. The 2D and representative 3D continuum simulations will be performed using widely recognized fluid model implementation in our in-house developed plasma solver library “CCPFoam” which uses robust finite volume library, OpenFOAM. The solver is capable of performing parallel multiphysics simulation using scalable algorithms and software tools for the simulation of complex physical phenomenon governed by plasma dynamics. An in-depth analysis has been performed on the usefulness and applicability of this solver in a competitive R&D work environment. Considerable emphasis is being placed on plasma modeling techniques, mainly assessing accuracy and efficiency of numerical schemes, utility of high performance numerical tools and sensitivity to input parameters. The simulations intend to show detailed analysis on the influence of physical parameters for capacitively coupled plasmas and dependence of characteristics of generated plasma on various physical parameters (e.g., process kit geometry and material properties), power supplied and operating pressure. The results will give insight into the applicability and future scope of this framework for high fidelity plasma product R&D.