AVS 65th International Symposium & Exhibition
    Plasma Science and Technology Division Tuesday Sessions
       Session PS+EM+NS+SS-TuA

Paper PS+EM+NS+SS-TuA9
Antimony-doped Tin Oxide Nanocrystals Synthesized by Low Temperature Plasma

Tuesday, October 23, 2018, 5:00 pm, Room 104A

Session: Plasma Processing of Challenging Materials - II
Presenter: Qinyi Chen, Washington University in St. Louis
Authors: Q. Chen, Washington University in St. Louis
E. Thimsen, Washington University in St. Louis
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For electrochemical applications, metal-oxide materials are attractive as electrodes for reactions occurring at positive potentials in the presence of water. Often, these metal-oxide materials function as an electrically-conductive support for a noble metal catalyst, and therefore must have very high specific surface area. Among conductive metal-oxide materials, antimony-doped tin oxide (ATO) stands out with its combination of: 1) high chemical stability over a wide range of pH values and reduction potentials, 2) high electrical conductivity, and 3) abundant constituent elements. Synthesis of ATO nanocrystals has been developed in liquid phase using sol-gel and colloidal methods. However, post-synthesis heat treatments are required to activate the electron donors and increase the conductivity of ATO nanocrystal assemblies prepared using liquid-phase techniques, which may adversely affect the surface area and pore structure of the material. In this work, we report on our efforts to synthesize monodispersed, conductive ATO nanocrystals through a single-step low temperature plasma growth method without any post treatments. Precursor vapors of tin and antimony were fed into a radiofrequency, flow-through low temperature plasma reactor. The precursor vapors reacted to nucleate ATO nanocrystals. Thin films comprised of ATO nanocrystals were then immediately deposited by supersonic impact deposition of the aerosol resulting from plasma synthesis. The resulting materials were characterized by a variety of methods to determine film thickness, porosity, nanocrystal size, and elemental composition. Local electron concentration and mobility within the nanocrystals were assessed by Fourier-transform infrared absorption spectroscopy. Hall effect was used to characterize longitudinal electrical transport in the film. The nanocrystal growth mechanism in the plasma will be discussed with a focus on antimony dopant incorporation. The effects of nanocrystal size on the transport properties of ATO thin films will be presented.