AVS 65th International Symposium & Exhibition | |
Advanced Ion Microscopy Focus Topic | Thursday Sessions |
Session HI-ThP |
Session: | Advanced Ion Microscopy Poster Session |
Presenter: | Waqas Ali, Intel Corporation, USA |
Authors: | W. Ali, Intel Corporation, USA S. Tan, Intel Corporation R.M. Hallstein, Intel Corporation, USA R.H. Livengood, Intel Corporation, USA |
Correspondent: | Click to Email |
He+ beam resolution characterization was done at 10, 20 and 30 kV beam energies whereas Ne+ beam resolution was characterized at 10 and 25 kV. The test was conducted on CVD graphene on TEM grid and ImageJ was used for image analysis. The lateral resolution for Helium was 0.54 ± 0.07 nm at 30 kV beam energy whereas for Neon the resolution was 2.45 ± 0.46 nm at 25 kV beam energy both with 100 fA beam currents. The unparalleled resolution specs. of Ne+ and He+ ion beams have made them attractive not only for CE but for many other applications like high resolution imaging for fault isolation, failure analysis, EUV mask repair, lithography, graphene pattering, plasmonics and biological imaging etc. [2].
1. S. Tan and R. Livengood “Applications of GFIS in semiconductors”, book chapter, Helium Ion Microscope, pp 471-498, Springer (2016).
2. J. Orloff, "Fundamental limits to imaging resolution for focused ion beams", Journal of Vacuum Science and Technology B, vol. 14, pp. 3759 (1996).