| AVS 63rd International Symposium & Exhibition | |
| Plasma Science and Technology | Thursday Sessions |
| Session PS-ThP |
| Session: | Plasma Science and Technology Division Poster Session |
| Presenter: | Hiroyuki Miyazoe, IBM T.J. Watson Research Center |
| Authors: | H. Miyazoe, IBM T.J. Watson Research Center A.V. Jagtiani, IBM T.J. Watson Research Center S.U. Engelmann, IBM T.J. Watson Research Center D.R. Boris, Naval Research Laboratory S.C. Hernández, Naval Research Laboratory E.H. Lock, Naval Research Laboratory S.G. Walton, Naval Research Laboratory E.A. Joseph, IBM T.J. Watson Research Center |
| Correspondent: | Click to Email |
The ability to achieve atomic layer precision is among the ultimate goals envisioned for plasma etching technology. Electron beam generated plasma (Large Area Plasma Processing System: LAPPS) as developed in the Naval Research Laboratory (NRL) is one such candidate to realize these process goals [1]. We have been demonstrating process feasibility for single layer graphitic carbon films such as graphene and carbon nanotubes (CNTs), which have unique properties, making them well-suited for studying the ability to process with atomic layer precision and assess impact of plasma damage. [2] In this work, we explore SiN etching using pulsed, electron beam generated plasmas produced in Ar/SF6 and Ar/O2 mixtures. The impact of process parameters such as relative gas concentration, duty factor, and substrate bias on the etch rates and selectivity (vs. carbon films, silicon and silicon oxide) has been investigated. The results indicate the ability to achieve etch rates lower than 50 nm/min, depending on material, suggesting the potential for surface engineering with monolayer precision. We also investigated tight pitch patterning of SiN films using LAPPS. Etching of »10nm-thick SiN at 60 nm pitch with minimized line roughness was demonstrated. Taken together, this work suggests electron beam generated plasmas are a promising route toward atomic layer processing. This work is partially supported by the Naval Research Laboratory base program.
Reference: [1] S.G. Walton, et al., ECS J. Solid State Sci. Technol. 4 (2015) N5033. [2] A. Jagtiani et al., J. Vac. Sci. Technol A 34 (2016) 01B103.