| AVS 63rd International Symposium & Exhibition | |
| Plasma Science and Technology | Thursday Sessions |
| Session PS-ThP |
| Session: | Plasma Science and Technology Division Poster Session |
| Presenter: | Virginia Anderson, Naval Research Laboratory |
| Authors: | V. Anderson, Naval Research Laboratory D.R. Boris, Naval Research Laboratory N. Nepal, Naval Research Laboratory S.D. Johnson, Naval Research Laboratory A.C. Kozen, Naval Research Laboratory Z. Robinson, Boston University S.C. Hernandez, Naval Research Laboratory C.R. Eddy, Jr., Naval Research Laboratory S.G. Walton, Naval Research Laboratory |
| Correspondent: | Click to Email |
III-Nitride (III-N) binary compounds (InN GaN and AlN) are attractive semiconductor materials for a wide range of device applications. Plasma assisted atomic layer epitaxy (PA-ALE) is a low temperature conformal layer-by-layer deposition technique that is based on a pair of self-terminating and self-limiting gas-surface half-reactions, in which at least one half-reaction involves species from a plasma. In this work we employ optical emission spectroscopy and charged particle collectors to characterize an inductively coupled plasma on a commercial atomic layer epitaxy tool. In particular, we assess the total ion flux reaching the substrate surface and the relative fractions of atomic and molecular species generated in the plasma under a variety of pressures and gas input flow fractions of argon and nitrogen. The objective is to diagnose optimum conditions for the production of N* radicals in the plasma source, believed to be most useful for the growth of III-N films, and correlate these changes in N* production with changes in film characteristics.