AVS 63rd International Symposium & Exhibition
    Plasma Science and Technology Thursday Sessions
       Session PS-ThP

Paper PS-ThP17
Backside Via Last Process Technologies for Wafer Level 3D Stacking.

Thursday, November 10, 2016, 6:00 pm, Room Hall D

Session: Plasma Science and Technology Division Poster Session
Presenter: Toshiyuki Sakuishi, ULVAC Inc., Japan
Authors: T. Sakuishi, ULVAC Inc., Japan
T. Murayama, ULVAC Inc., Japan
Y. Morikawa, ULVAC Inc., Japan
Correspondent: Click to Email
The number of devices connected to the internet has been increasing year by year. Not only Smartphone and Tablet PC, Devices for IoT (Internet of Things) are expected to increase rapidly. Data traffic is increasing exponentially and the data centers are required to be high speed data processing and low power consumption. Required performances are high bandwidth/bandwidth density, low latency, increased data processing speed, expanded data storage. These are desired to achieve without increasing cost. For multifunctionality and downsizing, heterogeneous integration is essential technology. To achieve these requirements, the backside via-last process is very important. We have been developing Si deep RIE technique and process integration that are optimized for via-last TSV formation. Our etching process is mainly non-Bosch etching using SF6/O2 based gas. To realize high rate etching, high density F radical is necessary. In addition, the Non-Bosch etching performs etching and sidewall protection simultaneously, so proportion of F and O radical is important. Key technology to achieve a uniform proportion of F and O radical is multi-ICP (Inductively Coupled Plasma) source. Our etching source newly developed shows excellent performance in Non-Bosch etching, but also adapts to Bosch etching. Our Non-Bosch etching is better to taper angle controllability. Tapered shape and smooth sidewall improve the deposition coverage and reduce the TSV formation cost. New Si deep RIE technique using multi-ICP source opens the way to new 3D packaging technology.