| AVS 63rd International Symposium & Exhibition | |
| Plasma Science and Technology | Thursday Sessions |
| Session PS-ThP |
| Session: | Plasma Science and Technology Division Poster Session |
| Presenter: | Mike Cooke, Oxford Instruments Plasma Technology, UK |
| Authors: | M.J. Cooke, Oxford Instruments Plasma Technology, UK A.L. Goodyear, Oxford Instruments Plasma Technology, UK R. Sundaram, Oxford Instruments Plasma Technology, UK B. Halsall, Oxford Instruments Plasma Technology, UK |
| Correspondent: | Click to Email |
How close can a real plasma etcher come to delivering ideal atomic layer etch (ALE)? We describe hardware studies into the limits of using conventional plasma etch tools to perform cyclical self-limiting etch processes, especially the chemical stability of the chamber and the electrical reproducibility of short RF plasmas. Self-limiting behaviour is not in itself evidence of single layer etching: silicon ALE etch rates are shown to depend strongly on chamber history.
The promise of ALE to etch single atomic layers is tested by using an optimised etch tool to etch 2D materials, grown by CVD. Raman spectroscopy of MoS2 few-layer films before and after a cyclical etch process are presented.