Atomic layer deposition (ALD) has emerged as a key and enabling technology for <2X node fabrication methods in the modern semiconductor manufacturing toolbox. Today’s applications range from front-end-of-line (FEOL) spacers and liners, isolation gapfill, FinFet conformal doping, multi-patterning layers, and through-Si-via (TSV) 3D liners. When considering ALD for HVM applications, the appropriate selection of platform and tool architecture is imperative with the goal of optimizing performance, reliability, cost, and throughput. In the first section, platform architecture features and requirements will be correlated to ALD market applications. In the second section, we focus on increasing throughput. Throughput demands have led to several hardware and process innovations including driving ALD towards operation in sub-saturation regimes. The greatest advantage of ALD is the self-limiting nature of the two half reactions which provides precise thickness control, extremely high film uniformity and conformality. However, the first half reaction of precursor adsorption requires saturation at longer times with diminishing growth per unit time when considering the dose saturation curve. The self-limiting nature is achieved at the expense of lower throughput and higher chemical consumption. An alternative is to perform “sub-saturated” processing in the sub-saturated regime. This presents a paradigm shift for ALD that permits conformal film deposition without satisfying saturated half reactions. Herein we demonstrate the modulation of dosing uniformity and conversion uniformity using various process parameters to achieve excellent wafer-to-wafer thickness control, within wafer non-uniformity and compositional uniformity. The utilization of the sub-saturation processing regime provides advantages in terms of throughput and chemical usage and has driven novel hardware designs.