| AVS 63rd International Symposium & Exhibition | |
| Plasma Science and Technology | Wednesday Sessions |
| Session PS+TF-WeA |
| Session: | Plasma Deposition and Plasma Assisted ALD |
| Presenter: | Zhiguo Sun, GLOBALFOUNDRIES |
| Authors: | Z. Sun, GLOBALFOUNDRIES J. Shu, GLOBALFOUNDRIES P. Mennell, GLOBALFOUNDRIES Q. Yuan, GLOBALFOUNDRIES A. Madan, GLOBALFOUNDRIES S. Molis, GLOBALFOUNDRIES J. Mody, GLOBALFOUNDRIES Y. Zhang, GLOBALFOUNDRIES J. Shepard Jr, GLOBALFOUNDRIES |
| Correspondent: | Click to Email |
Ultra low k (ULK) films has been successfully integrated into Back End of Line(BEOL) interconnect to maintain a lower RC delay to take advantage of transistor continuous scaling, and to keep power consumption at a low level. However, due to its intrinsic composition and porosity, ULK films are susceptible to damage during the following process, especially patterning process and wet process such as wet clean and CMP. It is desirable to restore the dielectric constant to its original number to get full benefit if low k value. In this study, We will report a novel plasma treatment method being able to enhance the film resistance to plasma damage and repair the plasma damage. Through the detailed comparison between the pristine films,, damaged films and repaired films through analytical methods including Ellipsometry Porosimetry(EP) ,Fourier transform infrared spectroscopy ( FTIR), X-ray photoelectron spectroscopy (XPS) and Hg-probe, we find the organic plasma treatment capable of restoring the surface porosity, restore the lost methyl groups and restore the dielectric constant to its original value.