| AVS 61st International Symposium & Exhibition | |
| Electronic Materials and Processing | Friday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 9:00am | EM+EN-FrM3 The Capricious Effect of Heating on the Surface Photovoltage in Si-doped GaN Joy McNamara, K.L. Phumisithikul, A.A. Baski, M.A. Reshchikov, Virginia Commonwealth University |
| 9:20am | EM+EN-FrM4 Atomic Layer Deposition of III-Nitride Alloys using Hollow-Cathode Plasma Source for Post-CMOS Processing and 3D Integration C. Ozgit-Akgun, A. Haider, AliKemal Okyay, N. Biyikli, Bilkent University, Turkey |
| 9:40am | EM+EN-FrM5 Invited Paper Development of Nitride Nanorod Light-emitting Diode Array C.G. Tu, C.H. Liao, Y.F. Yao, C.Y. Su, H.S. Chen, W.H. Chen, C. Hsieh, H.T. Chen, Y.W. Kiang, Chih-Chung Yang, National Taiwan University, Taiwan, Republic of China |
| 10:40am | EM+EN-FrM8 Invited Paper Trends in Production Scale MOCVD Equipment for Nitride Semiconductors Alexander Gurary, Veeco Instruments, Inc. |
| 11:20am | EM+EN-FrM10 Growth of GaN on Sapphire, Si (111), and Ge/Si (111) using a Pulsed Electron Beam Deposition (PED) Process Nazmul Arefin, University of Oklahoma, M.H. Kane, Texas A&M University, K. Hossain, Amethyst Research Inc, B.N. Pritchett, Oklahoma Geological Survey, M.B. Johnson, P.J. McCann, University of Oklahoma |
| 11:40am | EM+EN-FrM11 Growth Template Impact on the Properties of InN Epilayers Grown by High-Pressure CVD Sampath Gamage, M.K.I. Senevirathna, Georgia State University, H. Babar, I.T. Ferguson, University of North Carolina at Charlotte, R. Collazo, North Carolina State University, N. Dietz, Georgia State University |