| AVS 60th International Symposium and Exhibition | |
| Plasma Science and Technology | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | PS-ThM1 Molecular Dynamics Analysis of Si Etching in HBr-based Plasmas: Ion Incident Energy and Angle Dependence N. Nakazaki, Y. Takao, K. Eriguchi, K. Ono, Kyoto University, Japan |
| 8:20am | PS-ThM2 MD Simulations of Pulsed Chlorine Plasmas Interaction with Ultrathin Silicon Films for Advanced Etch Processes P.D. Brichon, E. Despiau-Pujo, G. Cunge, M. Darnon, O. Joubert, Cnrs/ujf/ Cea - Ltm, France |
| 8:40am | PS-ThM3 Control of SiO2 Etch Properties by Pulsed Capacitively Coupled Plasmas Sustained in Ar/CF4/O2 S.-H. Song, M.J. Kushner, University of Michigan |
| 9:00am | PS-ThM4 Accuracy of the Step Sheath Approximation M.A. Sobolewski, NIST |
| 9:20am | PS-ThM5 Invited Paper Multi-dimensional Modeling of Industrial Plasma Processing Systems S. Rauf, J. Kenney, A. Agarwal, A. Balakrishna, M.-F. Wu, K. Collins, Applied Materials Inc. |
| 10:40am | PS-ThM9 Self-Consistent Simulations of the Radial Line Slot Antenna Plasma Source P. Ventzek, Tokyo Electron America, R. Upadhyay, Esgee Technologies Inc., M. Aita, J. Yoshikawa, T. Iwao, K. Ishibashi, Tokyo Electron Ltd., L. Raja, University of Texas at Austin |
| 11:20am | PS-ThM11 Feature Profile Simulator with Atomic Mono-Layer Resolution Capability P. Moroz, Tokyo Electron US Holdings |
| 11:40am | PS-ThM12 Feature Profile Evolution in Plasma Processing using On-Wafer Monitoring System T. Kubota, Tohoku University, Japan, M. Sato, Harada Corporation, Japan, T. Iwasaki, Mizuro Information & Research Institute, Inc., Japan, K. Ono, Mizuho Information & Research Institute, Inc., Japan, S. Samukawa, Tohoku University, Japan |