| AVS 60th International Symposium and Exhibition | |
| Electronic Materials and Processing | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | EM-ThA1 Electrically Detected Magnetic Resonance of Deep Level Centers in SiCN:H Dielectrics M. Mutch, P.M. Lenahan, Penn State University, S.W. King, Intel Corporation |
| 2:20pm | EM-ThA2 Effect of Hybrid Cleaning in Mitigating Low-k Damage for Critical BEOL Applications at 20 nm Node and Beyond N. Mohanty, J. Stillahn, Y.P. Feurprier, T. Yoshida, T. yamamura, L. Wang, Y. Chiba, K. Kumar, D.M. Morvay, P. Biolsi, TEL Technology Center, America, LLC, S. Mishra, W. Hwang, M. Wang, GLOBALFOUNDRIES U.S. Inc. |
| 2:40pm | EM-ThA3 Invited Paper Cu Interconnects at 1x Node - Challenges & Approaches S. Kesapragada, K. Shah, Applied Materials, Inc. |
| 3:40pm | EM-ThA6 Selective Deposition of Cu Film in Recessed Features using a Hollow Cathode Magnetron Physical Vapor Deposition Source A. Dulkin, I. Karim, H. Qiu, E. Ko, R. Tarafdar, K. Colinjivadi, J. Hahn, K. Leeser, K. Ashtiani, Lam Research Corp |
| 4:00pm | EM-ThA7 Analysis of Grain Structure and Electrical Resistivity of 17 nm Half-Pitch Copper Wires J.S. Chawla, K.J. Ganesh, B.J. Krist, J.S. Clarke, H.J. Yoo, Intel Corporation |
| 4:20pm | EM-ThA8 The Role of Gas-phase Reaction during Co-CVD using Amidinate Precursor for ULSI-Cu Liner Application Y. Suzuki, H. Shimizu, T. Momose, Y. Shimogaki, University of Tokyo, Japan |
| 4:40pm | EM-ThA9 Copper Reflow Modeling P. Stout, Applied Materials |
| 5:00pm | EM-ThA10 Chemical Mechanical Polishing of Gold G. Karbasian, H. Xing, A.O. Orlov, P.J. Fay, G.L. Snider, University of Notre Dame |
| 5:20pm | EM-ThA11 Effect of Nucleation Layer on Electrical Properties of W-contact in Sub 2x nm Flash Devices K.H. Lee, S.W. Kim, K.S. Lee, T.H. Kim, S.S. Lee, S.H. Kim, J.H. Won, Samsung Electronics, Republic of Korea |