| 8:00am |
EM+PS-WeM1 Invited Paper
Active Surfaces and Interfaces in Valence Change Memory Type Oxides
R. Waser, R. Dittman, RWTH Aachen University, C. Lenser, Forschungszentrum Juelich GmbH, Germany |
| 8:40am |
EM+PS-WeM3
Resistive Switching and Interface Structure of Metal / Ga2O3 / Metal Heterostructures
B. Zhao, X. Zheng, H. Pham, M.A. Olmstead, F.S. Ohuchi, University of Washington |
| 9:00am |
EM+PS-WeM4
The Effect of High-Pressured N2 Annealing in NiOx based Resistive Random Access Memory
D.H. Yoon, Y.J. Tak, J. Jung, S.J. Kim, H.J. Kim, Yonsei University, Republic of Korea |
| 9:20am |
EM+PS-WeM5 Invited Paper
Ionic Memory - Materials and Devices
M.N. Kozicki, Arizona State University |
| 10:40am |
EM+PS-WeM9
Electrode-bias Injection and Percolation Controlled Transport through Vacated O-atom Site Defects in Nano-grain (ng-) TM Oxides and in Non-crystalline (nc-) Si(Ge)O2
D. Zeller, G. Lucovsky, North Carolina State University, J. Kim, University of Illinois at Urbana Champaign |
| 11:00am |
EM+PS-WeM10
Investigation of the Dominant Conduction Mechanisms in Metal-Insulator-Metal Tunnel Diodes with Ta2O5 and Nb2O5 Dielectrics Deposited by Atomic Layer Deposition
N. Alimardani, J.F. Conley, Jr., Oregon State University |
| 11:20am |
EM+PS-WeM11
Mechanism of Light Emission and Optical Characteristics of Thin Film Metal Oxides
Y. Kuo, C.-C. Lin, Texas A&M University |