Paper PS+TF-MoA9
Reactive High Power Impulse Magnetron Sputtering (HiPIMS)
Monday, October 28, 2013, 4:40 pm, Room 102 B
| Session: |
Plasma Deposition |
| Presenter: |
J.T. Gudmundsson, University of Iceland |
| Authors: |
J.T. Gudmundsson, University of Iceland
F. Magnus, Uppsala University, Sweden
T.K. Tryggvason, University of Iceland
S. Shayestehaminzadeh, University of Iceland
S. Olafsson, University of Iceland
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| Correspondent: |
Click to Email |
Reactive high power impulse magnetron sputtering (HiPIMS) [1] provides both a high ionization fraction of a a high dissociation fraction of the molecular gas. Here we discuss reactive high power impulse magnetron sputtering sputtering (HiPIMS) of Ti target in Ar/N2 and Ar/O2 atmosphere. The discharge current waveform is highly dependent on the reactive gas flowrate, pulse repetition frequency and discharge voltage. The discharge current increases with decreasing repetition frequency. This we attribute to an increase in the secondary electron emission yield during the self-sputtering phase of the pulse, as nitride [2] or oxide [3] forms on the target. We also discuss the growth of TiN films on SiO2 at temperatures of 22-600 °C. The HiPIMS process produces denser films at lower growth temperature and the surface is much smoother and have a significantly lower resistivity than dc magnetron sputtered films on SiO2 at all growth temperatures due to reduced grain boundary scattering [4,5].[1] J. T. Gudmundsson, N. Brenning, D. Lundin and U. Helmersson, J. Vac. Sci. Technol. A, 30 030801 (2012)
[2] F. Magnus, O. B. Sveinsson, S. Olafsson and J. T. Gudmundsson, J. Appl. Phys., 110 083306 (2011)
[3] F. Magnus, T. K. Tryggvason, S. Olafsson and J. T. Gudmundsson, J. Vac. Sci. Technol., 30 (2012) 050601
[4] F. Magnus, A. S. Ingason, S. Olafsson and J. T. Gudmundsson, IEEE Elec. Dev. Lett., 33 (2012) 1045 - 1047
[5] S. Shayestehaminzadeh, T. K. Tryggvason, L. Karlsson, S. Olafsson and J. T. Gudmundsson, Thin Solid Films, submitted 2012