AVS 60th International Symposium and Exhibition
    Plasma Science and Technology Monday Sessions
       Session PS+TF-MoA

Paper PS+TF-MoA2
Characteristics of Plasma Generated by ICP-CVD with Various H2/SiH4 Ratios and the Resultant Properties of nc-Si:H Thin Films

Monday, October 28, 2013, 2:20 pm, Room 102 B

Session: Plasma Deposition
Presenter: J.H. Hsieh, Ming Chi University of Technology, Taiwan, Republic of China
Authors: J.H. Hsieh, Ming Chi University of Technology, Taiwan, Republic of China
Y.L. Lie, Ming Chi University of Technology, Taiwan, Republic of China
S.C. Lin, Ming Chi University of Technology, Taiwan, Republic of China
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Nc-SiH thin films were deposited with an ICP-CVD system attached with four internal antennas, under the variation of H2 /SiH4 ratios (R). During deposition, the generated plasma was characterized using a Langumir probe and an optical emission spectrometer (OES). The films’ properties were characterized using Raman spectrometry and FTIR. The results were correlated with those obtained from probe and OES studies. It was found that the crystallinity of nc-Si:H film was significantly affected by plasma density which was increased with the increase of R, but only to a certain extent. Both the plasma density and Xc reached the maximum at R=10, then leveled off. . The deposition rate decreased with the increase of IHa* which is obtained from the OES results. Also, it was also found that the crystallinity could be proportionally related to the increase of I*( SiH2+SiH3)/I(SiH+SiH2+SiH3) in FTIR spectra. This is could be due to that di-/poly- hydride bonding could serve to passivate the grain boundaries of Si nano-crystalline clusters.