AVS 59th Annual International Symposium and Exhibition | |
Plasma Science and Technology | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
8:00am | PS-WeM1 Invited Paper The Role and Impact of Metal Hard Masks on BEOL Etch Processes C. Labelle, R. Srivastava, R. Koshy, T.Q. Chen, F. Wu, A.P. Labonte, GLOBALFOUNDRIES, Y. Mignot, STMicroelectronics, M. Beard, B.G. Morris, Y. Yin, IBM Systems and Technology Group |
8:40am | PS-WeM3 Evaluation of Chemistry Effects of Fluorcarbon Molecules for High Aspect Ratio Silicon Oxide Etch C.M. Anderson, R. Gupta, C. Dussarrat, Air Liquide |
9:00am | PS-WeM4 Dielectric RIE Challenges Associated to Trench First Metal Hard Mask at 64 nm Pitch and Below Y. Feurprier, L. Wang, Tokyo Electron Tech. Center, America, LLC, S. Nakamura, Tokyo Electron Miyagi Ltd., Japan, J. Stillahn, Y. Chiba, K. Kumar, Tokyo Electron Tech. Center, America, LLC, Y. Mignot, STMicroelectronics, E. Soda, Renesas Electonics, R. Koshy, R. Srivastava, GLOBALFOUNDRIES, Y.J. Park, Samsung Electronics Co. Ltd., J. Arnold, IBM Research Group |
9:20am | PS-WeM5 Interfacial Characterization of Patterned Porous Low-k Nanostructure using Infrared and X-ray Photoelectron Spectroscopy S. Rimal, N. Ross, S. Koskey, T. Mukherjee, O. Chyan, University of North Texas |
9:40am | PS-WeM6 Separation of Radical and Photon Effects on Nanoporous Low-k Films J. Lee, D.B. Graves, University of California Berkeley |
11:00am | PS-WeM10 Evaluation of Novel Etch Gas for BEOL Interconnect Pattern Transfer at 14nm and 22nm Technologies R.L. Bruce, IBM T.J. Watson Research Center, T. Suzuki, M. Nakamura, Zeon Chemicals L.P., S. Engelmann, E.A. Joseph, E.M. Sikorski, N.C.M. Fuller, IBM T.J. Watson Research Center, A. Itou, Zeon Corporation |
11:20am | PS-WeM11 Dry Etching Characteristics Related to TiN Material Properties A.P. Labonte, F. Wu, V. Arunachalam, S. Patil, GLOBALFOUNDRIES, C. Niu, ST Microelectronics, France, T.Q. Chen, GLOBALFOUNDRIES, E. Wornyo, B.G. Morris, Y. Yin, IBM Microelectronics, Y. Mignot, ST Microelectronics, France |