AVS 59th Annual International Symposium and Exhibition
    Plasma Science and Technology Wednesday Sessions

Session PS-WeM
Advanced BEOL/Interconnect Etching

Wednesday, October 31, 2012, 8:00 am, Room 25
Moderator: A. Agarwal, Applied Materials Inc.


  Click here to Download program book for this session  
  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

8:00am PS-WeM1 Invited Paper
The Role and Impact of Metal Hard Masks on BEOL Etch Processes
C. Labelle, R. Srivastava, R. Koshy, T.Q. Chen, F. Wu, A.P. Labonte, GLOBALFOUNDRIES, Y. Mignot, STMicroelectronics, M. Beard, B.G. Morris, Y. Yin, IBM Systems and Technology Group
8:40am PS-WeM3
Evaluation of Chemistry Effects of Fluorcarbon Molecules for High Aspect Ratio Silicon Oxide Etch
C.M. Anderson, R. Gupta, C. Dussarrat, Air Liquide
9:00am PS-WeM4
Dielectric RIE Challenges Associated to Trench First Metal Hard Mask at 64 nm Pitch and Below
Y. Feurprier, L. Wang, Tokyo Electron Tech. Center, America, LLC, S. Nakamura, Tokyo Electron Miyagi Ltd., Japan, J. Stillahn, Y. Chiba, K. Kumar, Tokyo Electron Tech. Center, America, LLC, Y. Mignot, STMicroelectronics, E. Soda, Renesas Electonics, R. Koshy, R. Srivastava, GLOBALFOUNDRIES, Y.J. Park, Samsung Electronics Co. Ltd., J. Arnold, IBM Research Group
9:20am PS-WeM5
Interfacial Characterization of Patterned Porous Low-k Nanostructure using Infrared and X-ray Photoelectron Spectroscopy
S. Rimal, N. Ross, S. Koskey, T. Mukherjee, O. Chyan, University of North Texas
9:40am PS-WeM6
Separation of Radical and Photon Effects on Nanoporous Low-k Films
J. Lee, D.B. Graves, University of California Berkeley
11:00am PS-WeM10
Evaluation of Novel Etch Gas for BEOL Interconnect Pattern Transfer at 14nm and 22nm Technologies
R.L. Bruce, IBM T.J. Watson Research Center, T. Suzuki, M. Nakamura, Zeon Chemicals L.P., S. Engelmann, E.A. Joseph, E.M. Sikorski, N.C.M. Fuller, IBM T.J. Watson Research Center, A. Itou, Zeon Corporation
11:20am PS-WeM11
Dry Etching Characteristics Related to TiN Material Properties
A.P. Labonte, F. Wu, V. Arunachalam, S. Patil, GLOBALFOUNDRIES, C. Niu, ST Microelectronics, France, T.Q. Chen, GLOBALFOUNDRIES, E. Wornyo, B.G. Morris, Y. Yin, IBM Microelectronics, Y. Mignot, ST Microelectronics, France