AVS 59th Annual International Symposium and Exhibition | |
Late Breaking Session | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
2:00pm | LB+EM+GR+MN+TR-WeA1 Degradation Kinetics of Hard Gold Tribofilms N. Argibay, M.T. Dugger, M.T. Brumbach, S.V. Prasad, Sandia National Laboratories |
2:20pm | LB+EM+GR+MN+TR-WeA2 Effect of Nitrogen Concentration on the Surface Properties of Plasma Nitrided Tool Steels P. Abraha, J. Miyamoto, Meijo University, Japan |
2:40pm | LB+EM+GR+MN+TR-WeA3 High Strength Carbon Fiber Composite Wafers for Microfabrication L. Pei, K. Zufelt, R. VanFleet, R.C. Davis, J. Lund, K. Jones, B.D. Jensen, Brigham Young University, J. Abbott, M. Harker, M. Zappe, S. Liddiard, Moxtek |
4:00pm | LB+EM+GR+MN+TR-WeA7 Selective Graphitization using Multi-Ion Beam Lithography J. Fridmann, Raith USA Inc., S. Tongay, University of California, Berkeley, M. Lemaitre, A.F. Hebard, B. Gila, University of Florida, A. Nadzeyka, Raith GmbH, Germany, F. Ren, X. Wang, University of Florida, D.K. Venkatachalam, R.G. Elliman, Australian National University, Australia, B.R. Appleton, University of Florida |
4:20pm | LB+EM+GR+MN+TR-WeA8 Unrippling and Imaging of Extra-Large Free-Standing Graphene with Atomic Precision W.W. Pai, R. Breitweiser, Y.C. Hu, Y.C. Chao, National Taiwan University, Taiwan, Republic of China, Y.R. Tzeng, Institute of Nuclear Energy Research of Taiwan, Republic of China, L.J. Li, Academia Sinica, Taiwan, Republic of China, K.C. Lin, Catholic Fu Jen University, Taiwan, Republic of China |
4:40pm | LB+EM+GR+MN+TR-WeA9 Ultrafast Charge Transfer at Monolayer Graphene Surfaces with Varied Substrate Coupling S. Lizzit, ELETTRA Sincrotrone Trieste, Italy, R. Larciprete, CNR , Institute of Complex Systems, Italy, P. Lacovig, ELETTRA Sincrotrone Trieste, Italy, K. Kostov, Bulgarian Academy of Sciences, Bulgaria, D. Menzel, Technische Universität München and Fritz Haber Institute, Germany |
5:00pm | LB+EM+GR+MN+TR-WeA10 Fano Interference Effects in Hydrogen Intercalated Graphene A. Boosalis, T. Hofmann, University of Nebraska-Lincoln, R. Elmquist, M. Real, National Institute of Standards and Technology (NIST), M. Schubert, University of Nebraska-Lincoln |
5:20pm | LB+EM+GR+MN+TR-WeA11 In Situ Dry-Cleaning of Ge(100) Surface using H2O2 K. Kiantaj, T. Kaufman Osborn, T.J. Kent, A.C. Kummel, University of California San Diego |
5:40pm | LB+EM+GR+MN+TR-WeA12 Hf-based High-k Dielectrics for Ge MOS Stacks S. Fadida, M. Eizenberg, Technion Israel Institue of Technology, Israel, L. Nyns, D. Lin, S. Van Elshocht, M. Caymax, IMEC, Belgium |