| AVS 59th Annual International Symposium and Exhibition | |
| Late Breaking Session | Wednesday Sessions |
| Session LB+EM+GR+MN+TR-WeA |
| Session: | Select Topics in Surface and Interface Science |
| Presenter: | J. Fridmann, Raith USA Inc. |
| Authors: | J. Fridmann, Raith USA Inc. S. Tongay, University of California, Berkeley M. Lemaitre, University of Florida A.F. Hebard, University of Florida B. Gila, University of Florida A. Nadzeyka, Raith GmbH, Germany F. Ren, University of Florida X. Wang, University of Florida D.K. Venkatachalam, Australian National University, Australia R.G. Elliman, Australian National University, Australia B.R. Appleton, University of Florida |
| Correspondent: | Click to Email |
Promising techniques for growing graphene on SiC single crystals for electronic device fabrication include heating in UHV above the graphitization temperature (TG)1; or processing them in vacuum using pulsed excimer laser2.
We report recent findings on the graphitization of SiC using a patterned Ga implantation, in which the implanted regions exhibit reduced TG and enhanced graphitization above TG. Here we report an approach that combines ion implantation, thermal or pulsed laser annealing (PLA), and multi-ion beam lithography (MIBL) to both pattern and synthesize graphene nanostructures on SiC single crystals at low temperatures. This approach utilizes a MIBL system developed at the University of Florida in collaboration with Raith for implantation/nanofabrication, in combination with thermal annealing in vacuum or PLA with a 25 ns pulsed ArF laser in air. To investigate the mechanisms and the effects of the implanted species, ion damage, and annealing, samples were also subjected to broad-area ion-implantations using facilities at the Australian National University.
It has recently been shown that implantation of Si, Ge, Au, or Cu followed by thermal annealing in vacuum below the TG of SiC can selectively grow graphene only where the ions are implanted, and that graphene nanoribbons a few nanometers to microns wide can be formed using MIBL3. Additionally, we will show that graphene can be formed on implanted and/or unimplanted SiC by ArF PLA in air, at fluences from 0.4-1.2 J/cm2. AES, SEM, X-sectional TEM, micro-Raman analyses and heat flow simulations are presented to verify graphene growth and explain the effects and mechanisms involved.
1. C. Berger, Z. Song, T. Li, X. Li, A. Y. Ogbazghi, R. Feng, Z. Dai, A. N. Marchenkov, E. H.Conrad, P. N. First, and W. A. de Heer, J. Phys. Chem. 108, 19912 (2004)
2. Sangwon Lee, Michael F. Toney, Wonhee Ko, Jason C. Randel, Hee Joon Jung, Ko Munakata,Jesse Lu, Theodore H. Geballe, Malcolm R. Beasley, Robert Sinclair, Hari C. Manoharan, and Alberto Salleo; ACS Nano Vol.4, No. 12, 7524-7530 (2010).
3. S. Tongay, M. Lemaitre, J. Fridmann, A. F. Hebard, B. P. Gila, and B. R. Appleton, Appl. Phys. Lett. 100, 073501 (2012).