| AVS 59th Annual International Symposium and Exhibition | |
| Electronic Materials and Processing | Friday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | EM+NS-FrM1 Invited Paper Electrical Transport on Chemically Modified Silicon-on-Insulator Substrates G.P. Lopinski, National Research Council of Canada |
| 9:00am | EM+NS-FrM3 Evidence for Single Electron Tunnel Junction using Gold Nanoparticles on Oxide-Free Si(111) L. Caillard, O. Seitz, P. Campbell, University of Texas at Dallas, O. Pluchery, Université Pierre et Marie Curie, France, Y.J. Chabal, University of Texas at Dallas |
| 9:20am | EM+NS-FrM4 A Distribution of Variable Size Sn-islands on 0.8 nm Oxide/ Si (111): Local MOS Properties and Tunneling Studied with Synchrotron Radiation A. Silva, Universidade Nova de Lisboa, Portugal, K. Pedersen, Aalborg University, Denmark, Z.S. Li, Aarhus University, Denmark, P. Morgen, University of Southern Denmark |
| 9:40am | EM+NS-FrM5 Signatures of Interface Band Structure and Parallel Momentum Conservation of Hot Electrons across Metal-Semiconductor Schottky Diodes J. Garramone, Northwestern University, J. Abel, R. Balsano, University at Albany-SUNY, S. Barraza-Lopez, University of Arkansas at Fayetteville, V.P. LaBella, University at Albany-SUNY |
| 10:00am | EM+NS-FrM6 Metal-Fullerene Interfaces: A Dynamic System P. Reinke, J.B. McClimon, H. Sahalov, University of Virginia |
| 10:20am | EM+NS-FrM7 Invited Paper Scaling Silicide Contacts in Microlelectronics: At What Size will Material Characteristics affect Device Poperties ? C. Lavoie, IBM T.J. Watson Research Center |
| 11:00am | EM+NS-FrM9 Compositional Dependence of the Dielectric Function and Optical Conductivity of NiPt Alloy Thin Films L.S. Abdallah, T. Tawalbeh, I.V. Vasiliev, S. Zollner, New Mexico State University, C. Lavoie, IBM T.J. Watson Research Center, A. Ozcan, IBM Systems and Technology Group, M. Raymond, GLOBALFOUNDRIES |
| 11:20am | EM+NS-FrM10 Ultra-Shallow Junction Formation for sub-22nm CMOS Technology and Characterization using High-resolution SIMS M.J.P. Hopstaken, H. Wildman, D. Pfeiffer, IBM T.J. Watson Research Center, Z. Zhu, P. Ronsheim, IBM Systems and Technology Group, K.K. Chan, I. Lauer, J.S. Newbury, D.-G. Park, IBM T.J. Watson Research Center |
| 11:40am | EM+NS-FrM11 A Deep Dive into the Liquid Fermi Sea R.K. Schulze, J.C. Lashley, B. Mihaila, D.C. Wallace, Los Alamos National Laboratory |