| AVS 59th Annual International Symposium and Exhibition | |
| Plasma Science and Technology | Tuesday Sessions |
| Session PS1-TuA |
| Session: | Plasma Deposition and Plasma Enhanced ALD |
| Presenter: | Y. Kikuchi, Tohoku University and Tokyo Electron, Japan |
| Authors: | Y. Kikuchi, Tohoku University and Tokyo Electron, Japan A. Wada, Tohoku University, Japan S. Samukawa, Tohoku University, Japan |
| Correspondent: | Click to Email |
Carbon materials possess various functional properties by forming various structures of carbon atoms. Especially diamond-like carbon (DLC) film is one of the primary materials as alternative of metal electrodes in various devices, in contract a carbon doped silicon oxide (SiCOH) is known as a low-k dielectric in ultralarge-scale integration (ULSI) devices . However, it is difficult to precisely control their properties using conventional plasma-enhanced chemical vapor deposition (PECVD). To solve this problem, we have developed a neutral-beam-enhanced chemical vapor deposition (NBECVD) process as an alternative to the conventional PECVD process. NBECVD can almost completely eliminate the irradiation of UV photons and electrons to the substrate surface by a carbon aperture, resulting in a damage-free deposition process. Moreover, the NBECVD can form a film through surface polymerization caused by bombardment of an energy-controlled Ar neutral beam on the surface with absorbed precursors. We previously proposed controlling the molecular-level structures in SiOCH film on 2 inch wafer by using NBECVD process, which can control the film properties (k-value and modulus). Since the bombardment energy of the neutral beam can be precisely controlled by Ar plasma above a carbon aperture, selective dissociation of weak chemical bonds in the precursors is possible with applicable plasma source, which enables us to design the film structure by controlling the precursor structure.
In this study, we developed NBECVD equipment for 8 inch wafer selecting microwave plasma source and deposited DLC and SiCOH films. For DLC film, we used toluene as precursors to control sp2/sp3 bonds ratio and hydrogen content in the film. DMOTMDS was selected for SiCOH film as reported previously. As the results, we can form high-quality DLC films and high density and low-k SiCOH films on 8 inch wafer by controlling the film structure precisely.