AVS 59th Annual International Symposium and Exhibition
    Plasma Science and Technology Tuesday Sessions
       Session PS1-TuA

Paper PS1-TuA12
Tuning Material Properties in ALD ZnO Films: In Situ Plasma Treatments and Doping

Tuesday, October 30, 2012, 5:40 pm, Room 24

Session: Plasma Deposition and Plasma Enhanced ALD
Presenter: M.A. Thomas, Stetson University
Authors: M.A. Thomas, Stetson University
J.B. Cui, University of Arkansas at Little Rock
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A variety of techniques has been used to modulate the material properties of atomic layer deposited (ALD) ZnO thin films. The structural, optical, and electrical properties of the various ZnO films were characterized by techniques such as scanning electron microscopy, atomic force microscopy, x-ray diffraction, photoluminescence, transmission/absorption, and resistivity and Hall effect measurements. The electrical properties of ALD ZnO are shown to be readily tunable by combining in-situ plasma treatments with standard thermal-ALD processes. This new ALD technique is labeled plasma enhanced thermal-ALD (PET-ALD) and is capable of significantly reducing or increasing the n-type conductivity in ZnO by employing either an O2 or H2 plasma, respectively. The resistivity of such PET-ALD films is controllable within more than seven orders of magnitude. Doped ZnO films are also readily obtained by inserting an appropriate number of dopant cycles in between the standard ZnO growth sequence. By adjusting the number of dopant cycles the optical and electrical properties of ZnO can also be well controlled. These ALD films possessing a wide range of structural, optical, and electrical properties, all of which can be easily tuned with appropriate deposition parameters, serve as excellent candidates for use in a variety of electronic and optoelectronic devices.