AVS 59th Annual International Symposium and Exhibition
    Applied Surface Science Tuesday Sessions
       Session AS-TuP

Paper AS-TuP22
The Effect of Gas Environment on the Electronic and Optical Properties of Amorphous Indium Zinc Tin Oxide Thin Films

Tuesday, October 30, 2012, 6:00 pm, Room Central Hall

Session: Applied Surface Science Poster Session
Presenter: Y.R. Denny, Chungbuk National University (CBNU), Republic of Korea
Authors: Y.R. Denny, Chungbuk National University (CBNU), Republic of Korea
S.Y. Lee, Chungbuk National University (CBNU), Republic of Korea
K.I. Lee, Chungbuk National University (CBNU), Republic of Korea
S.J. Seo, Chungbuk National University (CBNU), Republic of Korea
S. Heo, Samsung Advanced Institute of Technology, Republic of Korea
J.G. Chung, Samsung Advanced Institute of Technology, Republic of Korea
J.C. Lee, Samsung Advanced Institute of Technology, Republic of Korea
H.J. Kang, Chungbuk National University (CBNU), Republic of Korea
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The electronic and optical properties of Indium Zinc Tin Oxide (IZTO) thin films were investigated by X-ray photoelectron spectroscopy (XPS) and reflection electron energy loss spectroscopy (REELS). IZTO thin films on a glass substrate have been prepared by RF magnetron sputtering. The composition ratios of In:Zn:Sn in IZTO thin films are 20:56.7:23.3. The films were deposited at the annealing temperature of 350 oC for 1 hour in air, oxygen mixed with water (annealed at 350oC), and 80% oxygen mixed with argon (without annealing). The XPS spectra shows that all IZTO thin films have the Sn-O, In-O, and Zn-O bonds. The REELS spectra revealed that the band gaps of IZTO thin films are 3.23 and 3.07 eV for water mixed oxygen and argon mixed oxygen, respectively. The value of band gap increased to 3.46 eV when the sample was annealed in air. All the measured band gaps by REEL are consistent with the optical band gaps determined by UV-Spectrometer. The average optical transmittance of all IZTO thin films in the visible light region was 86%. The sheet resistivity of IZTO thin films deposited in water and argon mixed oxygen was 5 times lower than that of air, which indicates that gas enviroment plays an important role in increasing the figure of merit (φTC) and thus improving the electrical and optical properties of IZTO thin films.