| AVS 59th Annual International Symposium and Exhibition | |
| Applied Surface Science | Tuesday Sessions |
| Session AS-TuP |
| Session: | Applied Surface Science Poster Session |
| Presenter: | J.M. Lin, University of Delaware |
| Authors: | J.M. Lin, University of Delaware K.A. Perrine, University of California, Irvine A.V. Teplyakov, University of Delaware |
| Correspondent: | Click to Email |
The manufacture of modern electronic devices has been longing for the higher control over chemical deposition processes and interface properties, as the electronic devices kept scaling down. As a result, a comprehensive understanding of surface reaction mechanisms between the precursor molecule and surface reactive sites is desired.
Numerous studies have addressed that chemically functionalized Si surfaces are promising solutions.
In this work, Copper (hexafluoroacetylacetonato) vinyltrimethylsilane, or Cu(hfac)VTMS, was used to deposit copper nanoparticles on several functionalized Si surfaces including H-Si(100), H-Si(111), NH2-Si(100), NH-Si(100), NHx-Si(100), and OH-Si(100). With atomic force microscopy (AFM), infrared spectroscopy (MIR-FTIR), X-ray photoelectron spectroscopy (XPS) and temperature programmed desorption (TPD) supported with density functional theory calculations (DFT), we have investigated the reaction kinetics and mechanism of the surface reaction and the effects of Si surface functionalization on particle size control and elemental composition of the as-deposited film.