| AVS 59th Annual International Symposium and Exhibition | |
| Applied Surface Science | Tuesday Sessions |
| Session AS-TuP |
| Session: | Applied Surface Science Poster Session |
| Presenter: | H.H. Hwang, University of Science and Technology (UST), Republic of Korea |
| Authors: | H.H. Hwang, University of Science and Technology (UST), Republic of Korea J.S. Jang, Chungbuk National University (CBNU), Republic of Korea H.J. Kang, Chungbuk National University (CBNU), Republic of Korea K.J. Kim, University of Science and Technology (UST), Republic of Korea |
| Correspondent: | Click to Email |
In-depth analysis by secondary ion mass spectrometry (SIMS) is very important for the development of electronic devices using multilayered structures, because the quantity and depth distribution of some elements are critical for the electronic properties. Correct determination of the interface locations is critical for the calibration of the depth scale in SIMS depth profiling analysis of multilayer films. However, the interface locations are distorted from real ones by the several effects due to sputtering with energetic ions.
In this study, we compared the three definitions for the determination of interface locations in SIMS depth profiling of multilayer films. Especially, we investigated the feasibility of 50 atomic % definition for Si/Ge and Si/Ti multilayer films by various SIMS analysis parameters. In 50 atomic % definition, the original SIMS depth profiles are converted into compositional depth profiles by the relative sensitivity factors (RSF) derived from the alloy reference films with well-known compositions determined by Rutherford backscattering spectroscopy (RBS).
The application of the 50% definition determined from the ion intensities was found to be very limited to specific systems showing clear interfaces. The definition of the interface by the dimer ions between the atoms in the two different layers was also difficult to apply due to the small intensity and the unclear variation at the interfaces.