| AVS 58th Annual International Symposium and Exhibition | |
| Plasma Science and Technology Division | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | PS-ThM1 Invited Paper 2010 Plasma Prize Lecture - Super-low Damage Top-down Processing for Future Nanoscale Devices Seiji Samukawa, Tohoku University, Japan |
| 8:40am | PS-ThM3 A Numerical Simulation Method for Plasma-induced Damage Profile in SiO2 Etching Nobuyuki Kuboi, T. Tatsumi, S. Kobayashi, J. Komachi, M. Fukasawa, T. Kinoshita, H. Ansai, Sony Corporation, Japan |
| 9:00am | PS-ThM4 Theoretical Analysis of Electron Transfer during the Process of Neutral Beam Generation Naoki Watanabe, S. Ohtsuka, T. Iwasaki, K. Ono, Y. Iriye, Mizuho Information & Research Institute, Inc., Japan, S. Ueki, BEANS Project 3D BEANS Center, Japan, O. Nukaga, Fujikura Ltd.,Japan, T. Kubota, Tohoku University, Japan, M. Sugiyama, University of Tokyo, Japan, S. Samukawa, Tohoku University, Japan |
| 9:20am | PS-ThM5 Energy and Angular Distribution Analysis for Neutral Beam and Application for Etching Simulation Shingo Ohtsuka, N. Watanabe, T. Iwasaki, K. Ono, Mizuho Information & Research Institute, Inc., Japan, Y. Iriye, O. Nukaga, S. Ueki, BEANS Project 3D BEANS Center, Japan, T. Kubota, Tohoku University, Japan, M. Sugiyama, University of Tokyo, Japan, S. Samukawa, Tohoku University, Japan |
| 9:40am | PS-ThM6 High-Aspect-Ratio Silicon Etching using Large-Diameter Neutral Beam Source Tomohiro Kubota, Tohoku University and BEANS Project, Japan, A. Wada, Tohoku University, Japan, S. Ohtsuka, K. Ono, Mizuho Information & Research Institute, Inc., Japan, H. Ohtake, Tohoku University, Japan, S. Ueki, Y. Nishimori, BEANS Project, Japan, G. Hashiguchi, Shizuoka University and BEANS Project, Japan, S. Samukawa, Tohoku University, Japan |
| 10:40am | PS-ThM9 Improvement in the Evaluation Technique for Plasma-Etch Si Damage using Photoreflectance Spectroscopy with Temperature Control Asahiko Matsuda, Y. Nakakubo, Y. Takao, K. Eriguchi, K. Ono, Kyoto University, Japan |
| 11:00am | PS-ThM10 The Mechanism of Thin SiO2 and GeO2 Film Formation during Low-Temperature Neutral Beam Oxidation Process Akira Wada, Tohoku University, Japan, K. Endo, M. Masahara, AIST, Japan, S. Samukawa, Tohoku University, Japan |
| 11:20am | PS-ThM11 Room Temperature Radical Annealing of Plasma Damaged Gallium Nitride Shang Chen, Y. Lu, K. Takeda, K. Ishikawa, H. Kondo, Nagoya University, Japan, H. Kano, NU Eco-engineering Co., Ltd, Japan, H. Amano, Nagoya University, Japan, Y. Tokuda, Aichi Insititute of Technology, Japan, T. Egawa, Nagoya Institute of Technology, Japan, M. Sekine, M. Hori, Nagoya University, Japan |
| 11:40am | PS-ThM12 Effect of Rapid Thermal Annealing on Si Surface Damage by HBr/O2- and H2-Plasma Yoshinori Nakakubo, A. Matsuda, Kyoto University, Japan, M. Fukasawa, Sony Corporation, Japan, Y. Takao, Kyoto University, Japan, T. Tatsumi, Sony Corporation, Japan, K. Eriguchi, K. Ono, Kyoto University, Japan |