| AVS 58th Annual International Symposium and Exhibition | |
| Nanomanufacturing Science and Technology Focus Topic | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | NM+NS+MS-TuA1 Invited Paper Assessing Nanotechnologies for Volume Manufacturing Brian E. Goodlin, S. Butler, L. Colombo, R. Doering, Texas Instruments Incorporated |
| 2:40pm | NM+NS+MS-TuA3 Invited Paper Material and Tool Design Challenges for Taking ALD to High-volume Production Beyond 30nm Node Brian Lu, Z. Karim, S. Ramananthan, AIXTRON Inc. |
| 4:00pm | NM+NS+MS-TuA7 Invited Paper The Metal-Oxide-Metal Vacancy Drift Memristor - A CMOS Compatible, High Speed, Non-Volatile Switch for Universal Memory and Storage R.S. Williams, John Paul Strachan, Hewlett-Packard Labs |
| 4:40pm | NM+NS+MS-TuA9 Invited Paper Large Scale Graphene: Progress and Challenges Rodney Ruoff, The University of Texas at Austin |
| 5:20pm | NM+NS+MS-TuA11 Laser-Assisted Electron-Beam Induced Deposition and Etching Nick Roberts, University of Tennessee and Omniprobe, Inc., J.D. Fowlkes, Oak Ridge National Laboratory, P.D. Rack, University of Tennessee and Oak Ridge National Laboratory, G.A. Magel, H.M. Marchman, C.D. Hartfield, T.M. Moore, Omniprobe, Inc. |
| 5:40pm | NM+NS+MS-TuA12 Channel SiGe Selective Epitaxy Process for DRAM High K Peripheral Transistors JaeHyun Yeo, H. Hwang, S. Lee, W. Yoo, S. Ahn, I. Jeon, B. Kim, S. Nam, S. Kim, K. Jung, J. Lee, S. Jang, T. Lee, K. Huh, S. Yamada, Samsung Electronics Co., Ltd, Republic of Korea |