| AVS 58th Annual International Symposium and Exhibition | |
| Plasma Science and Technology Division | Thursday Sessions |
| Session PS-ThP |
| Session: | Plasma Science and Technology Poster Session |
| Presenter: | Bo-Heng Liu, National Applied Research Laboratories, Taiwan, Republic of China |
| Authors: | B.H. Liu, National Applied Research Laboratories, Taiwan, Republic of China C.C. Kei, National Applied Research Laboratories, Taiwan, Republic of China C.C. Yu, National Applied Research Laboratories, Taiwan, Republic of China D.Y. Chiang, National Applied Research Laboratories, Taiwan, Republic of China C.N. Hsiao, National Applied Research Laboratories, Taiwan, Republic of China |
| Correspondent: | Click to Email |
Platinum nano-particles (NPs) and platinum thin films were deposited by using inductively coupled plasma atomic layer deposition (PEALD). In this PEALD process, the Ar/O2 reaction plasma was applied to decompose the ligands of Pt precursor (MeCpPtMe3) at varied substrate temperatures between 150 to 300 oC. The partial pressures of Ar and O2 were held at 1.5 and 0.5 Torr during the PEALD Pt NPs process. Next the PEALD Pt thin films deposited by using the lower pressure of Ar and O2 at 0.3 and 0.1 Torr. X-ray diffraction (XRD) patterns show that Pt NPs and thin films are polycrystalline and a preferred orientation along the (111) plane of the fcc structure. Based on the Transmission Electron Microscopy (TEM) measurement, the growth rate of Pt NPs size and Pt thin films thickness is about 0.04 nm/cycle. The Pt thin film 4f XPS spectra consists with the Pt 4f data that observed metallic Pt peaks deposited at 200 oC on Si wafer using Ar/O2 plasma of 400 W. The step coverage was approximately 100% coated in 170 nm (open diameter) trench structures with 3.5： 1 aspect ratio. The low resistivity of Pt NPs and Pt thin films prepared by using 600 and 200 cycles was 1.83×10-5 and 1.62×10-5 Ω-cm, respectively.
Keywords: inductively coupled plasma, PEALD, platinum NPs