| AVS 57th International Symposium & Exhibition | |
| Thin Film | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | TF2-TuM1 Invited Paper MRAM: A Practical Application of Spintronics D.W. Abraham, IBM |
| 8:40am | TF2-TuM3 Bipolar Resistive Switching Characteristics of HfOx with Anode-Interface HfAlOx Layer H.-C. Sohn, J.G. Kim, H.D. Na, K.-M. Lee, S.-H. Lee, Yonsei University, Republic of Korea |
| 9:00am | TF2-TuM4 Plasma Treatments of HfO2 Resitive RAM C. Vallée, P. Gonon, Ujf - Ltm, France, C. Mannequin, T. Chevolleau, Ltm - Umr 5129 Cnrs, France, H. Grampeix, N. Rochat, C. Licitra, V. Jousseaume, CEA-LETI-MINATEC, France |
| 9:20am | TF2-TuM5 Growth of GeTe Films by MOCVD and PE-MOCVD for Phase Change Memory E. Gourvest, STMicroelectronics, France, C. Vallée, UJF - LTM, France, P. Michallon, CEA-LETI-MINATEC, France, J. Vitiello, Altatech Semiconductor, France, R. Blanc, CNRS-LTM, France, D. Jourde, CEA-LETI-MINATEC, France, S. Lhostis, STMicroelectronics, France, S. Maitrejean, CEA-LETI-MINATEC, France |
| 9:40am | TF2-TuM6 Effects of Halogenated Plasma Chemistries on Degradation of Magnetic Material Properties R.M. Martin, D.W. Abraham, E.A. Joseph, Y. Zhang, IBM T.J. Watson Research Center |
| 10:40am | TF2-TuM9 Invited Paper Phase Change Materials for Random Access Memories: Deposition, Characterization and Performance C. Wiemer, CNR-IMM, Italy |
| 11:20am | TF2-TuM11 Bipolar Switching Behaviors in TiN/HfO2/Pt Systems for Nonvolatile Resistive Memory Applications D.-H. Ko, D.S. Lee, Y.H. Sung, Yonsei University, Republic of Korea |