| AVS 57th International Symposium & Exhibition | |
| Thin Film | Tuesday Sessions |
| Session TF2-TuM |
| Session: | Nonvolatile Memory |
| Presenter: | D.S. Lee, Yonsei University, Republic of Korea |
| Authors: | D.-H. Ko, Yonsei University, Republic of Korea D.S. Lee, Yonsei University, Republic of Korea Y.H. Sung, Yonsei University, Republic of Korea |
| Correspondent: | Click to Email |
Resistive random access memory devices based on transition metal-oxides (TMO) have been considered as the most promising candidates for the next generation nonvolatile memories because of its simple structures and compositions, low voltage operation and process compatibility with CMOS.
In this presentation, stable bipolar resistive switching behaviors of TiN/HfO2/Pt structures will be discussed for the first time. . The HfO2 films were grown by reactive stutter at room temperature using O2 and Ar gas, and the subsequent heat treatment was performed in an ambient of O2 at 300℃. TiN and Pt layers were used as the top and bottom electrode materials, respectively. For the characterization of stable bipolar resistive switching, current-voltage measurements were used in compliance with 1 mA. Excellent memory characteristics including low set/ reset voltages and long retention time were demonstrated without additional electroforming process. The bipolar resistive switching behavior can be explained by the formation of conductive path consisting of oxygen vacancies. We analyzed a composition and chemical bonding of HfO2 by x-ray photoelectron spectroscopy. In addition, microstructures of the films were analyzed by transmission electron microscopy.