AVS 57th International Symposium & Exhibition
    Plasma Science and Technology Wednesday Sessions
       Session PS2-WeA

Paper PS2-WeA7
Development of Sputter and CVD using the Hyperthermal Neutral Beam

Wednesday, October 20, 2010, 4:00 pm, Room Galisteo

Session: Neutral Beam Processing
Presenter: B.J. Lee, National Fusion Research Institute, Republic of Korea
Authors: B.J. Lee, National Fusion Research Institute, Republic of Korea
S.W. Choi, National Fusion Research Institute, Republic of Korea
D.C. Kim, National Fusion Research Institute, Republic of Korea
J.S. Kim, National Fusion Research Institute, Republic of Korea
K.S. Oh, National Fusion Research Institute, Republic of Korea
S.J. Yoo, National Fusion Research Institute, Republic of Korea
J.N. Jang, Korea University, Republic of Korea
Y.J. Lee, Korea University, Republic of Korea
M.P. Hong, Korea University, Republic of Korea
Y.C. Park, Handong Global University, Republic of Korea
Correspondent: Click to Email
New deposition processes using Hyperthermal Neutral Beam, which has energy between 1 ~ 100 eV, have been developed for the damage-free deposition below 80 oC. Many studies concerning the plasma and heat damage problems during the deposition of transconductive oxide such as Indium Tin Oxide (ITO) on various organic materials which are vulnerable to those damages. This presentation discusses characteristics of ITO thin films deposited by brand-new plasma-damage - free sputtering process on cross-linked Poly 4-vinylphenol (PVP) layer at the room temperature using HNB. Nano-crystal (nc) Si TFT manufactured at low temperature (< 100 oC), namely CVD using HNB to satisfy the stability, Vth Shift, mobility and on/off ratio for OLED operation is also discussed. Very thin (< 5 nm) incubation layer for the transition from amorphous to crystal occurred while growing the nc-Si thin film on the glass was grown.