| AVS 57th International Symposium & Exhibition | |
| Plasma Science and Technology | Monday Sessions |
| Session PS1-MoA |
| Session: | Advanced FEOL / Gate Etching I |
| Presenter: | C. Lee, Lam Research Corporation |
| Authors: | C. Lee, Lam Research Corporation M. Davis, Lam Research Corporation V. Vahedi, Lam Research Corporation |
| Correspondent: | Click to Email |
Energy reduction has become an emerging trend for semiconductor equipment manufacturing; as the technology evolves, demands for higher throughput on the etching of high aspect ratio structures (as driven by DRAM and NAND devices) have placed more demands on the amount of RF power required. A direct consequence of this is more energy is required, both to drive the RF generators and to provide the cooling necessary in order to remove heat generated. This talk will provide an overview on direct energy resource usage, such as power, water, thermal load, process gas usage, and what role does each of these play in the beyond 2x technology node.