| AVS 57th International Symposium & Exhibition | |
| Plasma Science and Technology | Tuesday Sessions |
| Session PS-TuP |
| Session: | Plasma Science and Technology Poster Session |
| Presenter: | J.-S. Park, Chung-Ang University, Republic of Korea |
| Authors: | J.-S. Park, Chung-Ang University, Republic of Korea J.-C. Woo, Chung-Ang University, Republic of Korea C.-I. Kim, Chung-Ang University, Republic of Korea |
| Correspondent: | Click to Email |
The ultra thinned body fully depleted silicon on insulator (UTB-FD SOI) is the solution to problems of short channel effect by shrinking the gate length. This device has many advantages of high drive current, high conductance and ideal sub threshold slope12. This device uses the TiN/HfO2 gate stack . The metal/high-k stack structure is being the core technology because reduction of device is faced with physical limitations.
So, we have to study about this metal/high-k stack3.
In this study is investigated the dry etching characteristics of the TiN in the TiN/HfO2 gate stack using inductively coupled plasma system. TiN thin film is etched by CF4/Cl2/He plasma. We investigate the etching chemistry of the CF4/Cl2 gas mixture. Etching parameters are gas mixing ratio, the RF power, the process pressure in this study. The chemical reactions on surface of the etched TiN and etched HfO2 are investigated by X-ray photoelectron spectroscopy. The profile of the etched TiN is investigated by Scanning electron microscope.
Reference
1S. Mukhopadhyay, K. W. Kim, X. Wang, D. J. Frank, P. Oldiges, C. T. Chuang and K. Roy, IEEE 27(4), 284 (2006)
2S. Eminent, S. Cristoloveanu, R. Clerc, A. Ohata and G. Ghibaudo, Solid-state Electronics 51(2), 239 (2007)
3D. P. Kim, X. Yang, J. C. Woo, D. S. Um and C. I. Kim J. Vac. Sci. Technol. A 27(6) 1320 (2009)