AVS 57th International Symposium & Exhibition
    Plasma Science and Technology Tuesday Sessions
       Session PS-TuP

Paper PS-TuP1
Etching Characteristics of Ge2Sb2Te5 in Chemical Effects for the Phase-Change Memory Applications

Tuesday, October 19, 2010, 6:00 pm, Room Southwest Exhibit Hall

Session: Plasma Science and Technology Poster Session
Presenter: J.S. Yang, Hynix Semiconductor
Authors: J.T. Cheong, Hynix Semiconductor
H.M. Lee, Hynix Semiconductor
J.S. Yang, Hynix Semiconductor
H.C. Jung, Hynix Semiconductor
H.C. Lee, Hynix Semiconductor
Y.S. Sohn, Hynix Semiconductor
H.S. Kang, Hynix Semiconductor
Correspondent: Click to Email
The present study aims at providing the fundamental data with respect to GST(Ge2Sb2Te5) composition and GST damage depending on etch conditions. GST etching in this study was processed by changing etchants. By Cl2 based GST etching, it was found that, there appeared degradation in the surface roughness due to GST damage, which is identified by XRD(x-ray diffraction) as an unknown phase different from FCC or HCP phases of GST, As for the sample etched by using CF4 of high ratio and Ar gas, the GST were found damage area where Ge and Sb were deficient in stoichiometry. Meanwhile, GST etch by CF4 of low ration and Ar gas exhibited the good results of this study, we have demonstrated the damage-free GST etching, which will be applicable for the Phase-Change Memory device.